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Microelectronics, Microsystems and Nanotechnology : Papers Presented at MMN 2000, Athens, Greece, 20-22 November 2000

Author: Xanthi Zianni
Publisher: New Jersey : World Scientific, ©2001.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. Contemporary news and future challenges in these fields are presented in invited papers.
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Conference on "Microelectronics, Microsystems, and Nanotechnology" (1st : 2000 : Athens, Greece).
Microelectronics, Microsystems, and Nanotechnology.
River Edge, N.J. : World Scientific, 2001
(DLC) 2002278809
(OCoLC)50291241
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Xanthi Zianni
ISBN: 9789812810861 9812810862 1281956457 9781281956453
OCLC Number: 505142852
Notes: "This volume contains the papers presented at the First Conference on "Microelectronics, Microsystems and Nanotechnology" ..."--Foreword.
Description: 1 online resource (xvii, 390 pages) : illustrations
Contents: Foreword; CONTENTS; Nanotechnology and Quantum Devices; A New Strategy for In Situ Synthesis of Oligonucleotides Arrays for DNA Chip Technology; Magnetotransport Properties of La-Ca-Mn-O Multilayers; A Novel Method for the Calculation of the Local Electric Field at the Emitting Surface of a Carbon Single-Wall nanotube; Study of Photoluminescence and Micro-Photoluminesence of V-Shaped Quantum Wires; Catalytic Action of Ni Atoms in the Formation of Carbon Nanotubes: A Combined Ab-initio and Molecular Dynamics study; Si Nanocrystal MOS Memory Obtained by Low-Energy Ion Beam Synthesis. Charge Effects and Related Transport Phenomena in Nanosize Silicon/Insulator StructuresRadiative Recombination from Silicon Quantum Dots in Si/SiO2 Superlattices; Avalanche Porous Silicon Light Emitting Diodes for Optical Intra-Chip Interconnects; Infrared Absorption in Strained Si/Si1-xGex/Si Quantum Wells; Thermopower Calculations at Filling Factor 3/2 and 1/2 for Two-Dimensional Systems; Thermoelectric Properties of Composite Fermions; Design and Fabrication of Supported-Metal Catalysts Through Nanotechnology. Calculated Spontaneous Emission Rates in Silicon Quantum Wires Grown in {100} PlaneElectrical Modeling and Characterization of Si/SiO2 Superlattices; Ge/SiO2 Thin Layers Through Low-Energy Ge+ Implantation and Annealing: Nanostructure Evolution and Electrical Characteristics; Vertical Transport Mechanisms in nc-Si / CaF2 Multi-layers; Photo- and Electroluminescence from nc-Si / CaF2 Superlattices; Ab Initio Calculation of the Optical Gap in Small Silicon Nanoparticles; Ground State Electronic Structure of Small Si Quantum Dots; Processing; Technology Roadmap Challenges for Deep Submicron CMOS. Photolithographic Materials for Novel Biocompatible Lift Off ProcessesPolycrystalline Silicon Thin Film Transistors Having Gate Oxides Deposited Using TEOS; Solid Interface Studies with Applications in Microelectronics; A Comparison Between Point Defect Injecting Processes in Silicon Using Extended Defects and Dopant Marker Layers as Point Defect Detectors; Rapid Thermal Annealing of Arsenic Implanted Silicon for the Formation of Ultra Shallow n+p Junctions; Simulation of the Formation and Characterization of Roughness in Photoresists; F2 laser (157 nm) Lithography: Materials and Processes. Fabrication of Fine Copper Lines on Silicon Substrates Patterned with AZ 5214 Photoresist via Selective Chemical Vapor DepositionInvestigation of the Nitridation of Al2O3 (0001) Substrates by a Nitrogen Radio Frequency Plasma Source; Simulation of Si and SiO2 Feature Etching in Fluorocarbon Plasmas; Epitaxial ErSi2 on Strained and Relaxed Si1-x Gex; Development of a New Low Energy Electron Beam Lithography Simulation Tool; CMOS Devices and Devices Based on Compound Semiconductors; Advanced SOI Device Architectures for CMOS ULSI.
Responsibility: editors, Androula G. Nassiopoulou, Xanthi Zianni.

Abstract:

This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics;  Read more...

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