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A model for electron-beam-induced current analysis of mc-Si addressing defect contrast behavior in heavily contaminated PV material : preprint

Autor: Harvey Guthrey; National Renewable Energy Laboratory (U.S.)
Editorial: [Golden, CO] : National Renewable Energy Laboratory, [2012]
Serie: Conference paper (National Renewable Energy Laboratory (U.S.)), 5200-54108.
Edición/Formato:   Libro-e : Documento : Publicación de conferencia : Publicación gubernamental nacional : Inglés (eng)
Base de datos:WorldCat
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Detalles

Tipo de material: Publicación de conferencia, Documento, Publicación gubernamental, Publicación gubernamental nacional, Recurso en Internet
Tipo de documento: Recurso en Internet, Archivo de computadora
Todos autores / colaboradores: Harvey Guthrey; National Renewable Energy Laboratory (U.S.)
Número OCLC: 805582275
Notas: Title from title screen (viewed on Aug. 6, 2012).
"June 2012."
"Presented at the 2012 IEEE Photovoltaic Specialists Conference, Austin, Texas, June 3-8, 2012."
Descripción: 1 online resource (3 pages) : illustrations.
Título de la serie: Conference paper (National Renewable Energy Laboratory (U.S.)), 5200-54108.
Responsabilidad: Harvey Guthrey [and others].

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