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Molecular beam epitaxy : from research to mass production

Author: Mohamed Henini
Publisher: Amsterdam : Elsevier, [2013]
Edition/Format:   Print book : EnglishView all editions and formats
Summary:
"This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has  Read more...
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Document Type: Book
All Authors / Contributors: Mohamed Henini
ISBN: 9780123878397 012387839X
OCLC Number: 788255722
Description: xi, 731 pages : illustrations ; 29 cm
Contents: 1. Molecular beam epitaxy: fundamentals, historical background and future prospects --
2. Molecular beam epitaxy in the ultra-vacuum of space: present and near future --
3. Growth of semiconductor nanowires by molecular beam epitaxy --
4. Droplet epitaxy of nanostructures --
5. Migration-enhanced epitaxy for low-dimensional structures --
6. MBE growth of high-mobility 2DEG --
7. Bismuth-containing III-V semiconductors: epitaxial growth and physical properties --
8. Molecular beam epitaxy of GaAsBi and related quaternary alloys --
9. MBE of dilute-nitride optoelectronic devices --
10. Effect of antimony coverage on InAs/GaAs, 001, heteroepitaxy --
11. Nonpolar cubic III-nitrides: from the basics of growth to device applications --
12. Molecular beam epitaxy of low-bandgap InGaN --
13. Molecular beam epitaxy of IV-VI semiconductors: multilayers, quantum dots and device applications --
14. Epitaxial growth of thin films and quantum structures of II-VI visible-bandgap semiconductors --
15. MBE of transparent semiconducting oxides --
16. Zinc oxide materials and devices grown by MBE --
17. Molecular beam epitaxy of complex oxides --
18. Epitaxial systems combining oxides and semiconductors --
19. Molecular beam epitaxy of III-V ferromagnetic semiconductors --
20. Epitaxial magnetic layers grown by MBE: model systems to study the physics in nanomagnetism and spintronic --
21. Atomic layer-by-layer molecular beam epitaxy of complex oxide films and heterostructures --
22. Molecular beam epitaxy of semi-magnetic quantum dots --
23. Graphene growth by molecular beam epitaxy --
24. Growth and characterisation of fullerene/GaAs interfaces and C60-doped GaAs and AIGaAs layers --
25. Molecular beam epitaxial growth and exotic electronic structure of topological insulators --
26. Thin films of organic molecules: interfaces and epitaxial growth --
27. Molecular beam epitaxy of wide-gap II-VI laser heterostructures --
28. MBE growth of THz quantum cascade lasers --
29. Systems and technology for production-scale molecular beam epitaxy --
30. Mass production of optoelectronic devices --
31. Mass production of sensors grown by MBE.
Responsibility: edited by Mohamed Henini.

Abstract:

Discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. This title summarizes MBE  Read more...

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"Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a Read more...

 
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Primary Entity

<http://www.worldcat.org/oclc/788255722> # Molecular beam epitaxy : from research to mass production
    a schema:Book, schema:CreativeWork ;
   library:oclcnum "788255722" ;
   library:placeOfPublication <http://id.loc.gov/vocabulary/countries/ne> ;
   schema:about <http://id.worldcat.org/fast/1024729> ; # Molecular beam epitaxy
   schema:about <http://id.worldcat.org/fast/1046913> ; # Optoelectronic devices--Materials
   schema:about <http://experiment.worldcat.org/entity/work/data/1171948726#Topic/optoelectronic_devices_materials> ; # Optoelectronic devices--Materials
   schema:about <http://id.worldcat.org/fast/1112237> ; # Semiconductors--Materials
   schema:about <http://id.loc.gov/authorities/subjects/sh2010112601> ; # Semiconductors--Materials
   schema:about <http://dewey.info/class/621.381/e23/> ;
   schema:bookFormat bgn:PrintBook ;
   schema:datePublished "2013" ;
   schema:description "1. Molecular beam epitaxy: fundamentals, historical background and future prospects -- 2. Molecular beam epitaxy in the ultra-vacuum of space: present and near future -- 3. Growth of semiconductor nanowires by molecular beam epitaxy -- 4. Droplet epitaxy of nanostructures -- 5. Migration-enhanced epitaxy for low-dimensional structures -- 6. MBE growth of high-mobility 2DEG -- 7. Bismuth-containing III-V semiconductors: epitaxial growth and physical properties -- 8. Molecular beam epitaxy of GaAsBi and related quaternary alloys -- 9. MBE of dilute-nitride optoelectronic devices -- 10. Effect of antimony coverage on InAs/GaAs, 001, heteroepitaxy -- 11. Nonpolar cubic III-nitrides: from the basics of growth to device applications -- 12. Molecular beam epitaxy of low-bandgap InGaN -- 13. Molecular beam epitaxy of IV-VI semiconductors: multilayers, quantum dots and device applications -- 14. Epitaxial growth of thin films and quantum structures of II-VI visible-bandgap semiconductors -- 15. MBE of transparent semiconducting oxides -- 16. Zinc oxide materials and devices grown by MBE -- 17. Molecular beam epitaxy of complex oxides -- 18. Epitaxial systems combining oxides and semiconductors -- 19. Molecular beam epitaxy of III-V ferromagnetic semiconductors -- 20. Epitaxial magnetic layers grown by MBE: model systems to study the physics in nanomagnetism and spintronic -- 21. Atomic layer-by-layer molecular beam epitaxy of complex oxide films and heterostructures -- 22. Molecular beam epitaxy of semi-magnetic quantum dots -- 23. Graphene growth by molecular beam epitaxy -- 24. Growth and characterisation of fullerene/GaAs interfaces and C60-doped GaAs and AIGaAs layers -- 25. Molecular beam epitaxial growth and exotic electronic structure of topological insulators -- 26. Thin films of organic molecules: interfaces and epitaxial growth -- 27. Molecular beam epitaxy of wide-gap II-VI laser heterostructures -- 28. MBE growth of THz quantum cascade lasers -- 29. Systems and technology for production-scale molecular beam epitaxy -- 30. Mass production of optoelectronic devices -- 31. Mass production of sensors grown by MBE."@en ;
   schema:description ""This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage"--"@en ;
   schema:editor <http://viaf.org/viaf/59312130> ; # Mohamed Henini
   schema:exampleOfWork <http://worldcat.org/entity/work/id/1171948726> ;
   schema:inLanguage "en" ;
   schema:name "Molecular beam epitaxy : from research to mass production"@en ;
   schema:productID "788255722" ;
   schema:workExample <http://worldcat.org/isbn/9780123878397> ;
   umbel:isLike <http://bnb.data.bl.uk/id/resource/GBB2A1514> ;
   wdrs:describedby <http://www.worldcat.org/title/-/oclc/788255722> ;
    .


Related Entities

<http://id.loc.gov/authorities/subjects/sh2010112601> # Semiconductors--Materials
    a schema:Intangible ;
   schema:name "Semiconductors--Materials"@en ;
    .

<http://id.worldcat.org/fast/1024729> # Molecular beam epitaxy
    a schema:Intangible ;
   schema:name "Molecular beam epitaxy"@en ;
    .

<http://id.worldcat.org/fast/1046913> # Optoelectronic devices--Materials
    a schema:Intangible ;
   schema:name "Optoelectronic devices--Materials"@en ;
    .

<http://id.worldcat.org/fast/1112237> # Semiconductors--Materials
    a schema:Intangible ;
   schema:name "Semiconductors--Materials"@en ;
    .

<http://viaf.org/viaf/59312130> # Mohamed Henini
    a schema:Person ;
   schema:familyName "Henini" ;
   schema:givenName "Mohamed" ;
   schema:name "Mohamed Henini" ;
    .

<http://worldcat.org/isbn/9780123878397>
    a schema:ProductModel ;
   schema:isbn "012387839X" ;
   schema:isbn "9780123878397" ;
    .


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