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Molecular beam epitaxy : from research to mass production Titelvorschau
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Molecular beam epitaxy : from research to mass production

Verfasser/in: Mohamed Henini
Herausgeber: Amsterdam : Elsevier, 2012.
Ausgabe/Format   E-Book : Dokument : EnglischAlle Ausgaben und Formate anzeigen
Datenbank:WorldCat
Zusammenfassung:
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has  Weiterlesen…
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Gattung/Form: Electronic books
Physisches Format Print version.
Molecular beam epitaxy.
Amsterdam : Elsevier, 2012
(OCoLC)788255722
Medientyp: Dokument, Internetquelle
Dokumenttyp Internet-Ressource, Computerdatei
Alle Autoren: Mohamed Henini
ISBN: 9780123918598 0123918596
OCLC-Nummer: 819506983
Beschreibung: 1 online resource
Inhalt: 1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects; 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future; 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy; 4. Droplet Epitaxy of Nanostructures; 5. Self-assembled Quantum Dots; 6. Migration Enhanced Epitaxy of Low Dimensional Structures; 7. Surfactant-modified Epitaxy; 8. MBE Growth of High Mobility 2DEG; 9. MBE of GaAsBi; 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys; 11. MBE of Dilute Nitride Optoelectronic Devices; 12. The Effects of Antimony During MBE Growth; 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications; 14. In-rich InGaN; 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices; 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors; 17. MBE of Semiconducting Oxides; 18. ZnO Materials and Devices grown by MBE; 19. MBE of Complex Oxides; 20. Epitaxial Systems Combining Oxides and Semiconductors; 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor; 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic; 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials; 24. MBE of Semimagnetic Quantum Dots; 25. MBE Growth of Graphene; 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers; 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators; 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth; 29. MBE of II-VI Lasers; 30. MBE Growth of Terahertz Quantum Cascade Lasers; 31. MBE as a Mass Production Technique; 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs; 33. Mass Production of Sensors Grown by MBE
Verfasserangabe: edited by Mohamed Henini.

Abstract:

Discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. This title summarizes MBE  Weiterlesen…

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"Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a Weiterlesen…

 
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