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Molecular Beam Epitaxy : Fundamentals and Current Status

Author: Marian A Herman; Helmut Sitter
Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg, 1996.
Series: Springer series in materials science, 7.
Edition/Format:   eBook : Document : English : Second, rev. and Updated editionView all editions and formats
Database:WorldCat
Summary:
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. This monograph discusses the most important aspects of an MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural para- meters of the grown (or growing) field or structure to the  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Marian A Herman; Helmut Sitter
ISBN: 9783642800603 3642800602
OCLC Number: 851392298
Description: 1 online resource (xiv, 453 pages).
Contents: Background Information --
1. Introduction --
Technological Equipment --
2. Sources of Atomic and Molecular Beams --
3. High-Vacuum Growth and Processing Systems --
Characterization Methods --
4. Characterization Techniques --
MBE Growth Process --
5. MBE Growth Processes of Lattice-Matched Structures --
6. Growth Processes in Strained-Layer MBE --
7. Material-Related Growth Characteristics in MBE --
Conclusion --
8. Outlook --
References.
Series Title: Springer series in materials science, 7.
Responsibility: by Marian A. Herman, Helmut Sitter.

Abstract:

It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate  Read more...

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