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Multi-layer inkjet printed contacts for silicon solar cells : preprint

Author: Calvin J Curtis; National Renewable Energy Laboratory (U.S.)
Publisher: Golden, CO : National Renewable Energy Laboratory, 2006.
Series: Conference paper (National Renewable Energy Laboratory (U.S.)), NREL/CP-520-39902.
Edition/Format:   eBook : Document : National government publication : English
Summary:
Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 degrees C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired  Read more...
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Material Type: Document, Government publication, National government publication, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Calvin J Curtis; National Renewable Energy Laboratory (U.S.)
OCLC Number: 166256348
Notes: Title from title screen (viewed on Aug. 22, 2007).
"May 2006."
"Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."
Description: 3 pages : illustrations.
Details: Mode of access: Internet from the NREL web site. Address as of 8/22/07: http://www.nrel.gov/docs/fy06osti/39902.pdf ; current access available via PURL.
Series Title: Conference paper (National Renewable Energy Laboratory (U.S.)), NREL/CP-520-39902.
Responsibility: C.J. Curtis [and others].

Abstract:

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 degrees C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 degrees C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

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