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Nano-CMOS design for manufacturability : robust circuit and physical design for sub-65 nm technology nodes

著者: Ban P Wong
出版: Hoboken, NJ : Wiley, ©2009.
エディション/フォーマット:   電子書籍 : Document : Englishすべてのエディションとフォーマットを見る
データベース:WorldCat
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"Nano-CMOS Design for Manufacturability examines the challenges that design engineers face in the nano-scaled era, such as exacerbated effects and the proven design for manufacturability (DFM) methodology in the midst of increasing variability and design process interactions. In addition to discussing the difficulties brought on by the continued dimensional scaling in conformance with Moore's law, the authors also  続きを読む
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ジャンル/形式: Electronic books
その他のフォーマット: Print version:
Nano-CMOS design for manufacturability.
Hoboken, NJ : Wiley, ©2009
(DLC) 2008007589
(OCoLC)212375857
資料の種類: Document, インターネット資料
ドキュメントの種類: インターネットリソース, コンピューターファイル
すべての著者/寄与者: Ban P Wong
ISBN: 9781615831753 1615831754 9780470382820 0470382821 9780470382813 0470382813
OCLC No.: 491221873
物理形態: 1 online resource (xv, 385 pages) : illustrations
コンテンツ: 1. Introduction. 1.1 DFM --
Value proposition. 1.2 Deficiencies in Boolean-based Design Rules in the sub-wavelength regime [6].1.3 Impact of Variability on Yield and Performance. 1.4 The industry challenge --
disappearing process window. 1.5 Mobility enhancement techniques --
a new source of variability induced by design process interaction. 1.6 Design dependency of chip surface topology. 1.7 Newly exacerbated narrow width effect in nano-CMOS nodes. 1.8 Well proximity effect. 1.9 Scaling beyond 65nm drives the need for model based DFM solutions. 1.10 Summary. PART 1: NEWLY EXACERBATED EFFECTS. 2. Lithography related Aspects of DFM. 2.1 Economic motivations for DFM. 2.2 Lithographic tools and techniques for advanced technology nodes. 2.3 Lithography limited yield. 2.4 Lithography driven DFM Solutions. 3. Interaction of layout with transistor performance and stress engineering techniques. 3.1 Introduction. 3.2 Impact of stress on transistor performance. 3.3 Stress propagation. 3.4 Stress sources. 3.5 Introducing stress into transistors. PART 2: DESIGN SOLUTIONS. 4. Signal and Power Integrity. 4.1 Introduction. 4.2 Interconnect Resistance, Capacitance and Inductance. 4.3 Inductance Effects on Interconnect. 5. Analog and Mixed Signal Circuit Design for Yield and Manufacturability. 5.1 Introduction. 5.2 Guidelines. 5.3 Device Selection. 5.4 Device Size Heart Beat. 5.5 Device Matching. 5.6 Design Guidelines. 5.7 Layout Guidelines. 5.8 Test. 6. Design for Variability, Performance and Yield. 6.1 Introduction. 6.2 Impact of variations (introduced by both process and circuit operation) on the design. 6.3 Some Parametric Fluctuations with new implications for design .6.4 Process Variations in Interconnects. 6.5 Impact of Deep Sub-Micron Integration in SRAMs. 6.6 Impact of Layout Styles on Manufacturability, Yield and Scalability. 6.7 Design for variations. 6.8 Summary. PART 3: THE ROAD TO DFM. 7. Nano-CMOS design tools: Beyond model-based analysis and correction. 7.1 Introduction. 7.2 Electrical Design for Manufacturability (DFM).7.3 Criticality Aware DFM. 7.4 On Guardbands, Statistics, and Gaps. 7.5 Opportunistic Mindsets. 7.6 Futures at o 45nm .7.7 Summary. 7.8 References.
責任者: Ban Wong [and others].
その他の情報:

概要:

"Nano-CMOS Design for Manufacturability examines the challenges that design engineers face in the nano-scaled era, such as exacerbated effects and the proven design for manufacturability (DFM) methodology in the midst of increasing variability and design process interactions. In addition to discussing the difficulties brought on by the continued dimensional scaling in conformance with Moore's law, the authors also tackle complex issues in the design process to overcome the difficulties, including the use of a functional first silicon to support a predictable product ramp. Moreover, they introduce several emerging concepts, including stress proximity effects, contour-based extraction, and design process interactions."--Jacket.

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