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Nanoscale semiconductor memories : technology and applications

Author: Santosh K Kurinec; Krzysztof Iniewski
Publisher: Boca Raton : Taylor & Francis, [2013] ©2014
Series: Devices, circuits, and systems.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
"Preface At no time in the history of the semiconductor industry has memory technology assumed such a pivotal position. The last decade has seen a remarkable shift in usage and value of semiconductor memory technologies. These changes have been driven by the elevation of three particular target applications for the development of memory technology performance attributes. The first and most obvious shift is that  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Nanoscale semiconductor memories.
Boca Raton : Taylor & Francis, 2013
(DLC) 2013045723
(OCoLC)785869259
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Santosh K Kurinec; Krzysztof Iniewski
ISBN: 9781466560611 1466560614
OCLC Number: 865582462
Description: 1 online resource.
Contents: SRAM: the benchmark of VLSI technology / Qingqing Liang --
Complete guide to multiple upsets in SRAMs processed in decananometric CMOS technologies / Gilles Gasiot and Philippe Roche --
Radiation hardened by design SRAM strategies for TID and SEE mitigation / Lawrence T. Clark --
DRAM technology / Myoung Jin Lee --
Concepts of capacitorless IT-DRAM and unified memory on SOI / Sorin Cristoloveanu and Maryline Bawedin --
A-RAM family: novel capacitorless IT-DRAM cells for 22 nm nodes and beyond / Francisco Gamiz, Noel Rodriguez, and Sorin Cristoloveanu --
Quantum dot-based flash memories / Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter Bimberg --
Spin-transfer-torque MRAM / Kangho Lee --
Magnetic domain wall "Racetrack" memory / Michael C. Gaidis and Luc Thomas --
Phase-change memory cell model and simulation / Jin He, Yujun Wei, and Mansun Chan --
Phase-change memory devices and electrothermal modeling / Helena Silva, Azer Faraclas, and Ali Gokirmak --
Nonvolatile memory device: resistive random access memory / Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing Sun --
Nanoscale resistive random access memory: materials, devices, and circuits / Hong Yu Yu.
Series Title: Devices, circuits, and systems.
Responsibility: edited by Santosh K. Kurinec, Krzysztof Iniewski.

Abstract:

"Preface At no time in the history of the semiconductor industry has memory technology assumed such a pivotal position. The last decade has seen a remarkable shift in usage and value of semiconductor memory technologies. These changes have been driven by the elevation of three particular target applications for the development of memory technology performance attributes. The first and most obvious shift is that mobile multimedia applications such as tablets and advanced cell phones have now replaced desktop data processing as the primary target for many new semiconductor technologies. The significance of this shift is that the smaller form factor and smaller semiconductor content automatically increases the percentage of value contributed by the analog wireless and the memory components. The second trend is driven by the explosive growth in the sheer volume of data that is being created and stored. The continuing growth in digital information is heavily driven by mobile multimedia access to cloud storage on the Internet as well as the astounding increase in image data storage and manipulation. The third trend is the shift of emphasis from the individual components to the ability to configure some highvolume elements in subsystems and multidie packages rather than as discrete components on a motherboard. Over the past three decades, numerous memory technologies have been brought to market with varying degrees of commercial success, such as static randomaccess memory (SRAM), pseudostatic RAM, NOR flash, erasable programmable readonly memory (EPROM), electrically erasable programmable readonly memory (EEPROM), dynamic RAM (DRAM), and NAND flash. Generally speaking, these "memory" technologies can be split into two categories: volatile and nonvolatile"--

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