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Nanoscale transistors : device physics, modeling and simulation

Author: Mark S Lundstrom; Jing Guo
Publisher: New York, NY : Springer, 2006.
Series: Springer ebook collection / Chemistry and Materials Science 2005-2008
Edition/Format:   Print book : EnglishView all editions and formats
Summary:

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.

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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Mark S Lundstrom; Jing Guo
ISBN: 0387280022 9780387280028
OCLC Number: 254774512
Notes: Literaturangaben.
Description: VI, 217 S. : ill., graph. Darst.
Contents: Basic Concepts.- Devices, Circuits, and Systems.- The Ballistic Nanotransistor.- Scattering Theory of the MOSFET.- Nanowire Field-Effect Transistors.- Transistors at the Molecular Scale.
Series Title: Springer ebook collection / Chemistry and Materials Science 2005-2008
Responsibility: Mark S. Lundstrom ; Jing Guo.
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