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Narrow gap semiconductors 2007 : proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK

Author: B N Murdin; S K Clowes
Publisher: Dordrecht ; Bristol : Springer Verlag in association with Canopus, ©2008.
Series: Springer proceedings in physics, 119.
Edition/Format:   eBook : Document : Conference publication : EnglishView all editions and formats
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The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon  Read more...

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Genre/Form: Electronic books
Conference papers and proceedings
Congresses
Additional Physical Format: Print version:
International Conference on Narrow-Gap Semiconductors and Related Materials (13th : 2007 : Guildford, England).
Narrow gap semiconductors 2007.
Dordrecht ; Bristol : Springer Verlag in association with Canopus, ©2008
(DLC) 2008924325
(OCoLC)227032806
Material Type: Conference publication, Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: B N Murdin; S K Clowes
ISBN: 9781402084256 1402084250 1402084242 9781402084249
OCLC Number: 311495492
Description: 1 online resource (xvi, 215 pages) : illustrations.
Contents: Part I - Spin-Related PhenomenaGate Dependence of Spin-Splitting in an InSb/InAlSb Quantum WellW.R. Branford, A. M. Gilbertson, P. D. Buckle, L. Buckle, T. Ashley, F. Magnus, S.K. Clowes, J.J. Harris, and L. F. CohenPhotogalvanic Effects in HgTe Quantum WellsB. Wittmann, S. N. Danilov, Z. D. Kwon, N. N. Mikhailov, S.A. Dvoretsky, R. Ravash, W. Prettl, and S. D. GanichevMagnetic and Structural Properties of Ferromagnetic GeMnTe LayersP. Dziawa, W. Knoff, V. Domukhovski, J. Domagala, R. Jakiela, E. Lusakowska, V. Osinniy, K. Swiatek, B. Taliashvili, and T. StoryControl and Probe of Carrier and Spin Relaxations in InSb Based StructuresG. A. Khodaparast, R. N. Kini, K. Nontapot, M. Frazier, E. C. Wade, J. J. Heremans, S. J. Chung , N. Goel , M. B. Santos , T. Wojtowicz, X. Liu, and J. K. FurdynaDensity and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum WellsK. L. Litvinenko, B. N. Murdin, S. K. Clowes, L. Nikzad, J. Allam, C. R. Pidgeon, W. Branford, L. F. Cohen, T. Ashley, and L. BuckleDependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb HeterostructuresH. Nose, S. Sugahara, and H. MunekataTemperature Dependence of the Electron Lande g-Factor in InSbC.R. Pidgeon, K.L. Litvinenko, L. Nikzad, J. Allam, L.F. Cohen, T. Ashley, M. Emeny, and B.N. MurdinAnomalous Spin Splitting of Electrons in InSb type-II Quantum Dots in an InAs MatrixYa.V. Terent'ev, O.G. Lyublinskaya, A.A. Toropov, B.Ya. Meltser, A.N. Semenov and S.V. IvanovMeasurement of the Dresselhaus and Rashba Spin-Orbit Coupling via Weak Anti-Localization in InSb Quantum WellsA.R. Dedigama, D. Jayathilaka, S.H. Gunawardana, S.Q. Murphy, M. Edirisooriya, N. Goel, T.D. Mishima, and M.B. Santos Part II - Growth, Fabrication,Characterisation and TheoryPicosecond Carrier Dynamics in Narrow-Gap Semiconductors Studied by Terahertz Radiation PulsesR. Adomavicius, R. Sustaviciute, and A. Krotkus Band Structure of InSbN and GaSbNA. Lindsay, A.D. Andreev, E. P. O'Reilly, and T. AshleyGrowth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength ApplicationsS. D. Coomber, L. Buckle, P. H. Jefferson, D. Walker, T. D. Veal, C. F. McConville, T. Ashley Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole DistributionA. V. Dmitriev and A. B. Evlyukhin InMnAs Quantum Dots: a Raman Spectroscopy AnalysisA. D. Rodrigues, J. C. Galzerani, E. Marega Jr., L. N. Coelho, R.. Magalhaes-Paniago, and G. J. SalamoConduction Band States in AlP/GaP Quantum WellsM. Goiran, M..P. Semtsiv, S. Dressler, W. T. Masselink, J. Galibert, G. Fedorov, D. Smirnov, V. V. Rylkov,, and J. LeotinGrowth of InAsSb Quantum Wells by Liquid Phase Epitaxy M. Yin, A. Krier, and R. JonesDiode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPEM. Yin, A. Krier, P.J. Carrington, R. Jones, and S. E. KrierEpitaxial Growth and Characterization of PbGeEuTe LayersV. Osinniy, P. Dziawa, V. Domukhovski, K. Dybko, W. Knoff, T. Radzynski, A. Lusakowski, K. Swiatek, E. Lusakowska, B. Taliashvili, A. Boratynski, and T. Story Monte Carlo Simulation of Electron Transport in PbTeV. Palankovski, M. Wagner, and W. Heiss L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum DotsS. I. Rybchenko, R. Gupta, I. E. Itskevich, and S. K. HaywoodAntimony Distribution in the InSb/InAs QD Heterostructures A.N. Semenov, O.G. Lyublinskaya, B.Ya. Meltser, V.A. Solov'ev, L.V. Delendik, and S.V. Ivanov Transport
Series Title: Springer proceedings in physics, 119.
Responsibility: B.N. Murdin, S.K. Clowes, (eds.).

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