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Nonvolatile memory design : magnetic, resistive, and phase change

Author: Hai Li; Yiran Chen
Publisher: Boca Raton, FL : CRC Press, ©2012.
Edition/Format:   eBook : Document : EnglishView all editions and formats
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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change.
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Li, Hai, 1975-
Nonvolatile memory design.
Boca Raton, FL : Taylor & Francis, ©2012
(DLC) 2011046210
(OCoLC)426810754
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Hai Li; Yiran Chen
ISBN: 9781439807460 1439807469 1280121599 9781280121593
OCLC Number: 773316150
Description: 1 online resource (xiv, 184 pages) : illustrations
Contents: 1. Introduction to semiconductor memories --
2. Phase change memory --
3. Spin-transfer torque RAM --
4. Resistive random access memory --
5. Memristors --
6. The future of nonvolatile memory.
Responsibility: Hai Li and Yiran Chen.

Abstract:

Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change.

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