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Operation and modeling of the MOS transistor

Author: Yannis Tsividis
Publisher: Boston : WCB/McGraw-Hill, ©1999.
Edition/Format:   Print book : English : 2nd edView all editions and formats
Database:WorldCat
Summary:

This edition has several improvements made to the content, organization and pedagogy. It introduces "Overview of the MOS Transistor" and has increased the number of examples featured. A chapter  Read more...

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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Yannis Tsividis
ISBN: 0070655235 9780070655232 0071167919 9780071167918
OCLC Number: 39042960
Description: xx, 620 pages : illustrations ; 24 cm
Contents: Ch. 1. Semiconductors, Junctions, and MOSFET Overview --
Ch. 2. The Two-Terminal MOS Structure --
Ch. 3. The Three-Terminal MOS Structure --
Ch. 4. The Four-Terminal MOS Transistor --
Ch. 5. MOS Transistors with Ion-Implanted Channels --
Ch. 6. Small-Dimension Effects / D. Antoniadis --
Ch. 7. The MOS Transistor in Dynamic Operation --
Large-Signal Modeling --
Ch. 8. Small-Signal Modeling for Low and Medium Frequencies --
Ch. 9. High-Frequency Small-Signal Models --
Ch. 10. MOSFET Modeling for Circuit Simulation --
App. A. Energy Bands and Related Concepts --
App. B. Basic Laws of Electrostatics in One Dimension --
App. C. Charge Density, Electric Field, and Potential in the pn Junction --
App. D. Energy Band Diagrams for the Two-Terminal MOS Structure --
App. E. Charge Density, Electric Field, and Potential in the Two-Terminal MOS Structure --
App. F. General Analysis of the Two-Terminal MOS Structure --
App. G. Careful Definitions for the Limits of Moderate Inversion --
App. H. Energy Band Diagrams for the Three-Terminal MOS Structure --
App. I. General Analysis of the Three-Terminal MOS Structure --
App. J. Drain Current Formulation Using Quasi-Fermi Potentials --
App. K. Results of a Detailed Formulation for the Drain Current and Drain Small-Signal Conductance in the Saturation Region --
App. L. Evaluation of the Intrinsic Transient Source and Drain Currents --
App. M. Charges for the Accurate Strong-Inversion Model --
App. N. Quantities Used in the Derivation of the Non-Quasi-Static y-Parameter Model.
Other Titles: MOS transistor
Responsibility: Yannis Tsividis.
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