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Optoelectronic devices : III-nitrides

Author: M Razeghi; Mohamed Henini
Publisher: Amsterdam ; San Diego ; Oxford : Elsevier, 2004.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency  Read more...
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Document Type: Book
All Authors / Contributors: M Razeghi; Mohamed Henini
ISBN: 0080444261 9780080444260
OCLC Number: 56657528
Description: xv, 575 pages : illustrations ; 25 cm
Contents: The rise of III-nitrides : an introduction --
The evolution of nitride semiconductors --
Technology of MOVPE production tools --
MOCVD growth of Group III nitrides for high-power, high-frequency applications --
Growth of nitride quantum dots --
A1N epitaxial layers for UV photonics --
Properties of III-V Nitrides substrates and homoepitaxial layers --
III-nitride ultraviolet light emitting sources --
III-nitride UV photoconductors --
Quaternary InAlGaN-based UV LEDs --
design and fabrication of GaN high power rectifiers --
GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices --
Ferromagnetism in GaN and related materials --
Phonons and electron-phonon interactions in III-nitride bulk and dimensionally confined semiconductors and their device implications --
Phase separation and ordering in cubic ternary and quaternary nitride alloys --
Electronic properties of intrinsic and heavily doped 3C-, nH-SiC (n=2, 4, 6) and III-N (III=B, Al, Ga, In).
Responsibility: M. Razeghi, M. Henini.

Abstract:

III-V Nitrides have potential usage in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a number of optoelectronic applications of  Read more...

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