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Optoelectronic integrated circuit design and device modeling

Author: Jianjun Gao
Publisher: Singapore : John Wiley, 2011.
Edition/Format:   Print book : EnglishView all editions and formats
Database:WorldCat
Summary:

Filling a gap within the rapidly growing area of transmitter and receiver modeling in OEICs, this book introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed  Read more...

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Document Type: Book
All Authors / Contributors: Jianjun Gao
ISBN: 9780470827345 0470827343
OCLC Number: 652445882
Description: xvi, 292 pages : illustrations ; 25 cm
Contents: Machine generated contents note: 1. Introduction --
1.1. Optical Communication System --
1.2. Optoelectronic Integrated Circuit Computer-Aided Design --
1.3. Organization of This Book --
References --
2. Basic Concept of Semiconductor Laser Diodes --
2.1. Introduction --
2.2. Basic Concept --
2.2.1. Atom Energy --
2.2.2. Emission and Absorption --
2.2.3. Population Inversion --
2.3. Structures and Types --
2.3.1. Homojunction and Heterojunction --
2.3.2. Index Guiding and Gain Guiding --
2.3.3. Fabry-Perot Cavity Lasers --
2.3.4. Quantum-Well Lasers --
2.3.5. Distributed Feedback Lasers --
2.3.6. Vertical-Cavity Surface-Emitting Lasers --
2.4. Laser Characteristics --
2.4.1. Single-Mode Rate Equations --
2.4.2. Multimode Rate Equations --
2.4.3. Small-Signal Intensity Modulation --
2.4.4. Small-Signal Frequency Modulation. 2.4.5. Large-Signal Transit Response --
2.4.6. Second Harmonic Distortion --
2.4.7. Relative Intensity Noise --
2.4.8. Measurement Technique --
2.5. Summary --
References --
3. Modeling and Parameter Extraction Techniques of Lasers --
3.1. Introduction --
3.2. Standard Double Heterojunction Semiconductor Lasers --
3.2.1. Large-Signal Model --
3.2.2. Small-Signal Model --
3.2.3. Noise Model --
3.3. Quantum-Well Lasers --
3.3.1. One-Level Equivalent Circuit Model --
3.3.2. Two-Level Equivalent Circuit Model --
3.3.3. Three-Level Equivalent Circuit Model --
3.4. Parameter Extraction Methods --
3.4.1. Direct-Extraction Method --
3.4.2. Semi-Analytical Method --
3.5. Summary --
References --
4. Microwave Modeling Techniques of Photodiodes --
4.1. Introduction --
4.2. Physical Principles --
4.3. Figures of Merit --
4.3.1. Responsivity --
4.3.2. Quantum Efficiency --
4.3.3. Absorption Coefficient. 4.3.4. Dark Current --
4.3.5. Rise Time and Bandwidth --
4.3.6. Noise Currents --
4.4. Microwave Modeling Techniques --
4.4.1. PIN PD --
4.4.2. APD --
4.5. Summary --
References --
5. High-Speed Electronic Semiconductor Devices --
5.1. Overview of Microwave Transistors --
5.2. FET Modeling Technique --
5.2.1. FET Small-Signal Modeling --
5.2.2. FET Large-Signal Modeling --
5.2.3. FET Noise Modeling --
5.3. GaAs/InP HBT Modeling Technique --
5.3.1. GaAs/InP HBT Nonlinear Model --
5.3.2. GaAs/InP HBT Linear Model --
5.3.3. GaAs/InP HBT Noise Model --
5.3.4. Parameter Extraction Methods --
5.4. SiGe HBT Modeling Technique --
5.5. MOSFET Modeling Technique --
5.5.1. MOSFET Small-Signal Model --
5.5.2. MOSFET Noise Model --
5.5.3. Parameter Extraction Methods --
5.6. Summary --
References --
6. Semiconductor Laser and Modulator Driver Circuit Design --
6.1. Basic Concepts --
6.1.1. NRZ and RZ Data. 6.1.2. Optical Modulation --
6.1.3. Optical External Modulator --
6.2. Optoelectronic Integration Technology --
6.2.1. Monolithic Optoelectronic Integrated Circuits --
6.2.2. Hybrid Optoelectronic Integrated Circuits --
6.3. Laser Driver Circuit Design --
6.4. Modulator Driver Circuit Design --
6.4.1. FET-Based Driver Circuit --
6.4.2. Bipolar Transistor-Based Driver Integrated Circuit --
6.4.3. MOSFET-Based Driver Integrated Circuit --
6.5. Distributed Driver Circuit Design --
6.6. Passive Peaking Techniques --
6.6.1. Capacitive Peaking Techniques --
6.6.2. Inductive Peaking Techniques --
6.7. Summary --
References --
7. Optical Receiver Front-End Integrated Circuit Design --
7.1. Basic Concepts of the Optical Receiver --
7.1.1. Signal-to-Noise Ratio --
7.1.2. Bit Error Ratio --
7.1.3. Sensitivity --
7.1.4. Eye Diagram --
7.1.5. Signal Bandwidth --
7.1.6. Dynamic Range --
7.2. Front-End Circuit Design. 7.2.1. Hybrid and Monolithic OEIC --
7.2.2. High-Impedance Front-End --
7.2.3. Transimpedance Front-End --
7.3. Transimpedance Gain and Equivalent Input Noise Current --
7.3.1. S Parameters of a Two-Port Network --
7.3.2. Noise Figure of a Two-Port Network --
7.3.3. Transimpedance Gain --
7.3.4. Equivalent Input Noise Current --
7.3.5. Simulation and Measurement of Transimpedance Gain and Equivalent Input Noise Current --
7.4. Transimpedance Amplifier Circuit Design --
7.4.1. BJT-Based Circuit Design --
7.4.2. HBT-Based Circuit Design --
7.4.3. FET-Based Circuit Design --
7.4.4. MOSFET-Based Circuit Design --
7.4.5. Distributed Circuit Design --
7.5. Passive Peaking Techniques --
7.5.1. Inductive Peaking Techniques --
7.5.2. Capacitive Peaking Techniques --
7.6. Matching Techniques --
7.7. Summary --
References.
Responsibility: Jianjun Gao.
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