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The physics and chemistry of SiO₂ and the Si-SiO₂ interface

Author: C Robert Helms; Bruce E Deal; Electrochemical Society. Meeting
Publisher: New York : Plenum Press, ©1988.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats

Proceedings of a symposium of the 173rd Meeting of the Electrochemical Society held in Atlanta, Georgia, May 15-20, 1988


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Genre/Form: Conference papers and proceedings
Additional Physical Format: Online version:
Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (1st : 1988 : Atlanta, Ga.).
Physics and chemistry of SiO₂ and the Si-SiO₂ interface.
New York : Plenum Press, ©1988
Material Type: Conference publication
Document Type: Book
All Authors / Contributors: C Robert Helms; Bruce E Deal; Electrochemical Society. Meeting
ISBN: 0306430320 9780306430329
OCLC Number: 18463657
Notes: "Proceedings of the Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface, held May 15-20, 1988, at the 173rd Meeting of the Electrochemical Society, in Atlanta, Georgia"--Title page verso.
Description: xiii, 556 pages : illustrations ; 26 cm
Contents: I. Growth Mechanisms of SiO2 Films.- Historical Perspectives of Silicon Oxidation.- Oxidation of Silicon: Tests of Mechanisms.- Silicon Oxidation Models Based on Parallel Mechanisms.- The Role of SiO in Si Oxidation at a Si-SiO2 Interface.- Uncertainty Analysis of Analytic Oxidation Models.- Modeling of the Oxide Growth in a Chlorine Ambient.- Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation.- Si Oxidation Mechanisms as Studied by Oxygen Tracer Methods.- The Oxidation of Suicides on Silicon.- Oxidation Kinetics of Si in Dry CO2.- A Novel Silicon Oxidation Method - HF Enhanced Oxidation.- Thermal Oxidation of Silicon in an Afterglow Gas.- Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD).- Anodic SiO2 for Low Temperature Gate Dielectrics.- II. Thermal and Structural Properties of SiO2.- Local Atomic Structure of Thermally Grown SiO2 Films.- Structural Relaxation and Growth of SiO2 Films on Si.- Structural Relaxation Effects in Dry Thermal Silicon Dioxide Films on Silicon.- Molecular Diffusion in a-SiO2: Its role in Annealing Radiation-Induced Defect Centers.- Current-Induced Charges and Hydrogen Species Distributions in MOS Silicon Dioxide Films.- III. The Atomic and Electronic Structure of the Si-SiO2 Interface.- The Structure of the Si/SiO2 Interface: A Review.- The Stoichiometry and Structure of the Si/SiO2 Interface: Ion Scattering Studies.- Scanning Tunneling Microscopy and Spectroscopy of Silicon Dangling Bond Defects.- The Microstructure of SiO2-Si(100) Interfaces Investigated by XPS and HRTEM.- Microscopic Structure of the SiO2-Si Interface.- ARXPS Analysis of Si-SiO2 Interfaces.- Dependence of SiO2-Si Interface Structures on Oxidation Process.- The Effect of Electrostatic Screening on Energy Positions of Spectra Near SiO2-Si Interfaces.- A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation.- Theoretical Calculations of the Electronic Structure in the Si-SiO2 Systems.- Theory of Defects in the MOS System.- IV. Defects, Impurities, and Damage Mechanisms in Si-SiO2 Systems.- Nature of Radiation-Induced Point Defects in Amorphous SiO2 and their Role in SiO2-on-Si Structures.- Chemical and Structural Features of Inherent and Process-Induced Defects in Oxidized Silicon.- Chemical Kinetics of Hydrogen and Pb Centers.- Electronic and Optical Properties of Silicon Dangling-Bond Defects at the Si-SiO2 Interface.- Transient Spectroscopy on Individual Interface Traps in MOSFETS.- Observation of "1/f-Noise States" in Conductance Measurements on MOS Structures.- The Gate-Voltage Dependence of Trapping into Individual Si:SiO2 Interface States.- Step Heights of Switching Effects of Single Interface Traps in MOSFETS.- Low Temperature Conductance of Si-MOS Devices after Hot Carrier Degradation.- The Neutral Level of Si-SiO2 Interface States.- MOS Tunneling Rate and Interface State Capture Cross-Section.- Defect Transformation Process at SiO2/Si Interfaces.- V. Effects of Preoxidation Substrate Quality, Surface Treatments, and Oxidation Induced Point Defect Generation.- Preoxidation Surface Treatments in Thermal Oxidation of Silicon.- The Si-SiO2 Interface Roughness: Causes and Effects.- Defects and Impurities in SiO2 Interface for Oxides Prepared Using Superclean Methods.- The Effect of Chemical Cleaning on the Kinetics of Thermal Oxidation.- Studies of Anhydrous HF Preoxidation Treatment of Silicon Surfaces.- The Influence of the Si-Substrate Characteristics on the Quality of Poly-Si and Al Gated MOS Oxides.- Dielectric Breakdown of SiO2 Grown on Rough Si Surfaces.- Effects of Deionized Water Rinses on Gate Oxide Leakage Currents.- Oxidation-Induced Defects and Effects in Silicon During Low Thermal-Budget Processing.- Implications of Oxidation Models on the Point Defect Behavior in the Silicon Substrate.- Interstitial Fluxes During Silicon Oxidation.- VL Electron and Hole Transport and Tunneling in SiO2.- Charge Trapping in SiO2.- Historical Perspective on Tunneling in SiO2.- Hot Electron Transport in Silicon Dioxide.- Ion Implantation and Ionizing Radiation Effects in Thermal Oxides.- Interface and Bulk Trapping Centers in Low Temperature Ion-Beam Sputtered Silicon Dioxide Films.- Interface Improvement by Hot Carrier Degradation - Forming Gas Annealing Cycle.- Effects of X Irradiation and High Field Electron Injection on the Properties of Rapid Thermal Oxides.
Responsibility: edited by C. Robert Helms and Bruce E. Deal.


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