skip to content
Physics of semiconductor devices. Preview this item
ClosePreview this item
Checking...

Physics of semiconductor devices.

Author: S M Sze; Kwok K Ng
Publisher: New York : John Wiley & Sons, 2007.
Edition/Format:   Print book : English : 3. edView all editions and formats
Summary:

The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device  Read more...

Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Document Type: Book
All Authors / Contributors: S M Sze; Kwok K Ng
ISBN: 0471143235 9780471143239
OCLC Number: 488586029
Description: x, 815 s. : illustrations
Contents: Introduction. Part I Semiconductor Physics. Chapter 1 Physics and Properties of Semiconductors-A Review. 1.1 Introduction. 1.2 Crystal Structure. 1.3 Energy Bands and Energy Gap. 1.4 Carrier Concentration at Thermal Equilibrium. 1.5 Carrier-Transport Phenomena. 1.6 Phonon, Optical, and Thermal Properties. 1.7 Heterojunctions and Nanostructures. 1.8 Basic Equations and Examples. Part II Device Building Blocks. Chapter 2 p-n Junctions. 2.1 Introduction. 2.2 Depletion Region. 2.3 Current-Voltage Characteristics. 2.4 Junction Breakdown. 2.5 Transient Behavior and Noise. 2.6 Terminal Functions. 2.7 Heterojunctions. Chapter 3 Metal-Semiconductor Contacts. 3.1 Introduction. 3.2 Formation of Barrier. 3.3 Current Transport Processes. 3.4 Measurement of Barrier Height. 3.5 Device Structures. 3.6 Ohmic Contact. Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction. 4.2 Ideal MIS Capacitor. 4.3 Silicon MOS Capacitor. Part III Transistors. Chapter 5 Bipolar Transistors. 5.1 Introduction. 5.2 Static Characteristics. 5.3 Microwave Characteristics. 5.4 Related Device Structures. 5.5 Heterojunction Bipolar Transistor. Chapter 6 MOSFETs. 6.1 Introduction. 6.2 Basic Device Characteristics. 6.3 Nonuniform Doping and Buried-Channel Device. 6.4 Device Scaling and Short-Channel Effects. 6.5 MOSFET Structures. 6.6 Circuit Applications. 6.7 Nonvolatile Memory Devices. 6.8 Single-Electron Transistor. Chapter 7 JFETs, MESFETs, and MODFETs. 7.1 Introduction. 7.2 JFET and MESFET. 7.3 MODFET. Part IV Negative-Resistance and Power Devices. Chapter 8 Tunnel Devices. 8.1 Introduction. 8.2 Tunnel Diode. 8.3 Related Tunnel Devices. 8.4 Resonant-Tunneling Diode. Chapter 9 IMPATT Diodes. 9.1 Introduction. 9.2 Static Characteristics. 9.3 Dynamic Characteristics. 9.4 Power and Efficiency. 9.5 Noise Behavior. 9.6 Device Design and Performance. 9.7 BARITT Diode. 9.8 TUNNETT Diode. Chapter 10 Transferred-Electron and Real-Space-Transfer Devices. 10.1 Introduction. 10.2 Transferred-Electron Device. 10.3 Real-Space-Transfer Devices. Chapter 11 Thyristors and Power Devices. 11.1 Introduction. 11.2 Thyristor Characteristics. 1 1.3 Thyristor Variations. 11.4 Other Power Devices. Part V Photonic Devices and Sensors. Chapter 12 LEDs and Lasers. 12.1 Introduction. 12.2 Radiative Transitions. 12.3 Light-Emitting Diode (LED). 12.4 Laser Physics. 12.5 Laser Operating Characteristics. 12.6 Specialty Lasers. Chapter 13 Photodetectors and Solar Cells. 13.1 Introduction. 13.2 Photoconductor. 13.3 Photodiodes. 13.4 Avalanche Photodiode. 13.5 Phototransistor. 13.6 Charge-Coupled Device (CCD). 13.7 Metal-Semiconductor-Metal Photodetector. 13.8 Quantum-Well Infrared Photodetector. 13.9 Solar Cell. Chapter 14 Sensors. 14.1 Introduction. 14.2 Thermal Sensors. 14.3 Mechanical Sensors. 14.4 Magnetic Sensors. 14.5 Chemical Sensors. Appendixes. A. List of Symbols. B. International System of Units. C. Unit Prefixes. D. Greek Alphabet. E. Physical Constants. F. Properties of Important Semiconductors. G. Properties of Si and GaAs. H. Properties of SiO, and Si3N. Index.

Reviews

User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


Primary Entity

<http://www.worldcat.org/oclc/488586029> # Physics of semiconductor devices.
    a schema:Book, schema:CreativeWork ;
    library:oclcnum "488586029" ;
    library:placeOfPublication <http://dbpedia.org/resource/New_York_City> ; # New York
    library:placeOfPublication <http://id.loc.gov/vocabulary/countries/nyu> ;
    schema:about <http://experiment.worldcat.org/entity/work/data/473835815#Topic/halvlederkomponenter> ; # halvlederkomponenter
    schema:about <http://experiment.worldcat.org/entity/work/data/473835815#Topic/halbleiterbauelement> ; # Halbleiterbauelement
    schema:about <http://experiment.worldcat.org/entity/work/data/473835815#Topic/vlsi> ; # VLSI
    schema:about <http://experiment.worldcat.org/entity/work/data/473835815#Thing/mosfets> ; # MOSFETs.
    schema:about <http://experiment.worldcat.org/entity/work/data/473835815#Thing/modfets> ; # MODFETs.
    schema:about <http://experiment.worldcat.org/entity/work/data/473835815#Topic/ic> ; # IC
    schema:bookEdition "3. ed." ;
    schema:bookFormat bgn:PrintBook ;
    schema:contributor <http://viaf.org/viaf/108213875> ; # S. M. Sze
    schema:contributor <http://viaf.org/viaf/54246653> ; # Kwok K. Ng
    schema:datePublished "2007" ;
    schema:exampleOfWork <http://worldcat.org/entity/work/id/473835815> ;
    schema:inLanguage "en" ;
    schema:name "Physics of semiconductor devices." ;
    schema:productID "488586029" ;
    schema:publication <http://www.worldcat.org/title/-/oclc/488586029#PublicationEvent/new_york_john_wiley_&_sons_2007> ;
    schema:publisher <http://experiment.worldcat.org/entity/work/data/473835815#Agent/john_wiley_&_sons> ; # John Wiley & Sons
    schema:workExample <http://worldcat.org/isbn/9780471143239> ;
    wdrs:describedby <http://www.worldcat.org/title/-/oclc/488586029> ;
    .


Related Entities

<http://dbpedia.org/resource/New_York_City> # New York
    a schema:Place ;
    schema:name "New York" ;
    .

<http://experiment.worldcat.org/entity/work/data/473835815#Agent/john_wiley_&_sons> # John Wiley & Sons
    a bgn:Agent ;
    schema:name "John Wiley & Sons" ;
    .

<http://experiment.worldcat.org/entity/work/data/473835815#Topic/halbleiterbauelement> # Halbleiterbauelement
    a schema:Intangible ;
    schema:name "Halbleiterbauelement" ;
    .

<http://experiment.worldcat.org/entity/work/data/473835815#Topic/halvlederkomponenter> # halvlederkomponenter
    a schema:Intangible ;
    schema:name "halvlederkomponenter" ;
    .

<http://viaf.org/viaf/108213875> # S. M. Sze
    a schema:Person ;
    schema:familyName "Sze" ;
    schema:givenName "S. M." ;
    schema:name "S. M. Sze" ;
    .

<http://viaf.org/viaf/54246653> # Kwok K. Ng
    a schema:Person ;
    schema:familyName "Ng" ;
    schema:givenName "Kwok K." ;
    schema:name "Kwok K. Ng" ;
    .

<http://worldcat.org/isbn/9780471143239>
    a schema:ProductModel ;
    schema:isbn "0471143235" ;
    schema:isbn "9780471143239" ;
    .


Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.