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Polycrystalline semiconductors : grain boundaries and interfaces : proceedings of the international symposium, Malente, Fed. Rep. of Germany, August 29-September, 2, 1988

Author: H J Möller; H P Strunk; J H Werner
Publisher: Berlin ; New York : Springer-Verlag, ©1989.
Series: Springer proceedings in physics, v. 35.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
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Genre/Form: Kongress
Conference papers and proceedings
Congresses
Additional Physical Format: Online version:
Polycrystalline semiconductors.
Berlin ; New York : Springer-Verlag, ©1989
(OCoLC)610213268
Material Type: Conference publication, Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: H J Möller; H P Strunk; J H Werner
ISBN: 0387508872 9780387508870 3540508872 9783540508878
OCLC Number: 19324925
Notes: Includes index.
Description: xi, 394 pages : illustrations ; 25 cm.
Contents: I Grain Boundary Structure.- Intergranular Total Energy Maps and the Structure of a Grain Boundary.- Grain Boundary Structure Determination by HREM: A Comparison with Computer Relaxed Configurations for Pure Tilt in Germanium.- Multiple Structures of a [001] ? = 13 Tilt Grain Boundary in Germanium.- Computer Modelling of Grain Boundaries by Use of Interatomic Potentials.- Transmission of Dislocations with Non-common Burgers Vectors Through ? = 9 (12?2) Boundaries in Silicon and Germanium Observed by In Situ HVEM.- II Grain Boundary Chemistry and Electronic Properties.- High Resolution Electron Microscopy of the Structure and Chemistry of Grain Boundaries and Other Interfaces in Semiconductors.- Theoretical Studies of the Impurity Segregation and Electrical Properties of Polycrystalline Silicon by LCAO Electronic Theory.- Electronic Properties of ? = 25 Silicon Bicrystals by Deep Level Transient Spectroscopy.- The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the ? = 25 Boundary.- EBIC Contrast and Precipitation in ? = 13 and ? = 25 Annealed Silicon Bicrystals.- Electron Beam Induced Current Contrast and Transmission Electron Microscopy Analysis of Special Grain Boundaries in Silicon.- SEM-EBIC Investigations of the Electrical Activity of Grain Boundaries in Germanium.- III Segregation, Activation and Passivation.- Atomic-Level Imaging and Microanalysis of Grain Boundaries in Polycrystalline Semiconductors.- Investigation of the Cobalt Segregation at Grain Boundaries in Silicon.- On the Influence of the Cottrell Atmosphere on the Recombination Losses at Grain Boundaries in Polycrystalline Silicon.- Hydrogen Passivation of Grain Boundaries in Silicon Sheet Material.- Atomic Hydrogen Passivation Studies of Microcrystalline Phases in Ion-Implant Damaged Surface Layers of Silicon.- Hydrogen Injection and Migration in Silicon.- Analysis of the Polycrystalline Semiconducting Film Electrical Resistance Variation Due to Isothermal Desorption and Temperature Stimulated Desorption of Oxygen.- IV Segregation, Activation and Passivation.- Activation and Passivation of Grain Boundary Recombination Activity in Polycrystalline Silicon.- Thermal Activation and Hydrogen Passivation of Grain Boundaries.- Analysis of Metal-Doped Polycrystalline Silicon with Secondary Ion Mass Spectrometry.- Oxygen Detection in Polycrystalline Silicon.- Generation of Radiation Defects in the Vicinity of Twin Boundaries in EFG Silicon Ribbons.- Physical Properties of Polycrystalline S-Web Si Ribbons.- Grain Boundary Structure in S-WEB Silicon Ribbon.- Characterization of MBE-Grown Polysilicon.- V Technology.- Mechanisms of Epitaxial Growth of Polar Semiconductors on (001) Silicon.- Preparation and Characterization of Nickel Silicide.- Characterization of the Interface of Silicon pn-Junctions, Fabricated by the Silicon Direct Bonding (SDB) Method.- Metal and Polycrystalline Silicon Reactions.- Interfacial Reactions of TiNx/Si Contacts.- Linear and Parabolic Growth Kinetics in Binary Couples.- VI Thin Films.- Polycrystalline Compound Semiconductor Thin Films in Solar Cells.- Electronic Properties of Photoetched CdSe Films.- Thin Film Transistors and Light Sensors with Polycrystalline CdSe-Semiconductors.- VII Crystallization.- Crystallization Processes and Structures of Semiconductor Films.- Crystallized Silicon Films for Active Devices.- Laser Recrystallization of Polysilicon for Improved Device Quality.- Growth of Sb-Doped Epitaxial Si Layers Through Recrystallization of Poly-Si on a (100) Si Substrate.- VIII Transport Properties.- Current Control by Electrically Active Grain Boundaries.- Numerical Modelling of the Intergranular Potential Barrier Height and Carrier Concentration in Polysilicon.- Hall Mobility and Carrier Concentration of e-Gun Evaporated Poly-Si Films.- Measurement and Calculation of the Carrier Concentration in Polycrystalline Germanium Thin Films.- Grain Boundary States in Float-Zone Silicon Bicrystals.- Pressure Studies of Metastable Electron Traps in Grain Boundaries of p-HgMnTe and p-HgCdMnTe.- Band Tailing in Polycrystalline and Disordered Silicon.- IX Thin Films.- Microstructure and Interfaces of Polysilicon in Integrated Circuits.- Effect of the Grain Boundaries in Small Grain Polysilicon Thin Film Transistors.- Kink Effect in the Double-Gate Accumulation-Mode N-Channel Polysilicon Thin-Film Transistors.- Applications of Poly-Si in Selective-Area and Three-Dimensional Devices.- Thin-Film Transistors from Evaporated Low Temperature Processed Poly-Si Films.- Pressure Effect on In Situ Boron-Doped LPCVD Silicon Films.- Index of Contributors.
Series Title: Springer proceedings in physics, v. 35.
Responsibility: editors: H.J. Möller, H.P. Strunk, and J.H. Werner.

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