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Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy

Author: John C Bean; Leo J Schowalter; Electrochemical Society. Electronics Division.; Electrochemical Society. Dielectrics and Insulation Division.
Publisher: Pennington, NJ (10 S. Main St., Pennington 08534-2896) : Electrochemical Society, ©1988.
Series: Proceedings (Electrochemical Society), v. 88-8.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
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Genre/Form: Conference papers and proceedings
Congresses
Additional Physical Format: Online version:
International Symposium on Silicon Molecular Beam Epitaxy (2nd : 1987 : Honolulu, Hawaii).
Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy.
Pennington, NJ (10 S. Main St., Pennington 08534-2896) : Electrochemical Society, ©1988
(OCoLC)644611525
Material Type: Conference publication, Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: John C Bean; Leo J Schowalter; Electrochemical Society. Electronics Division.; Electrochemical Society. Dielectrics and Insulation Division.
OCLC Number: 17935818
Notes: On spine: Silicon molecular beam epitaxy II.
Symposium held on Oct. 20-23, 1987 in Honolulu Hawaii and sponsored by the Electronics and the Dielectrics and Insulation Divisions of the Electrochemical Society.
Description: x, 619 pages : illustrations ; 23 cm.
Series Title: Proceedings (Electrochemical Society), v. 88-8.
Other Titles: Silicon molecular beam epitaxy II.
Silicon molecular beam epitaxy 2.
Responsibility: edited by John C. Bean, Leo J. Schowalter ; assistant editors, Hiroshi Ishiwara, Erich Kasper, Evan H.C. Parker.

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