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Process and device modeling

Author: Walter L Engl
Publisher: Amsterdam ; New York : North-Holland ; New York, N.Y., U.S.A. : Sole distributors for the U.S.A. and Canada, Elsevier Science Pub. Co., 1986.
Series: Advances in CAD for VLSI, v. 1.
Edition/Format:   Print book : EnglishView all editions and formats
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Additional Physical Format: Online version:
Process and device modeling.
Amsterdam ; New York : North-Holland ; New York, N.Y., U.S.A. : Sole distributors for the U.S.A. and Canada, Elsevier Science Pub. Co., 1986
(OCoLC)609856463
Document Type: Book
All Authors / Contributors: Walter L Engl
ISBN: 0444878912 9780444878915 0444878904 9780444878908
OCLC Number: 12809975
Description: x, 461 pages : illustrations ; 25 cm.
Contents: Preface. 1. Physical Models and Numerical Methods for VLSI Process Simulation (B. R. Penumalli). 2. Ion Implantation Models for Process Simulation (H. Ryssel, J. P. Biersack). 3. Simulation of Lithography (A. R. Neureuther, W. G. Oldham). 4. Physical Models for Numerical Device Simulation (G. Baccarani et al.). 5. Basic Theory of Stationary Numerical Models (M. S. Mock). 6. New Approaches to Submicron Device Modelling (A. Yoshii, M. Tomizawa). 7. Computational Aspects of Semiconductor Device Simulation (R. E. Bank et al.). 8. On Modeling MOS-Devices (S. Selberherr). 9. Three-Dimensional Device Simulation using a Mixed-Process/Device Simulator (N. Shigyo, R. Dang). 10. Numerical Model Hierarchies (H. K. Dirks). 11. The Application of Process and Device Simulation Tools to VLSI Development (E. J. Prendergast, P. Lloyd, W. T. Cochran). 12. Compact MOSFET Modeling (F. M. Klaassen). 13. Compact Bipolar Transistor Modeling (H. C. De Graaff). 14. Device and Circuit Simulator Integration Techniques (T. Shima).
Series Title: Advances in CAD for VLSI, v. 1.
Responsibility: edited by W.L. Engl.

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