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Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

Author: M E Levinshteĭn; Sergey L Rumyantsev; Michael Shur
Publisher: New York : Wiley, 2001.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:

Several advanced semiconductor materials are now in the forefront of semiconductor research. These materials include different polytypes of SiC, SiGe alloys, and nitrides, such as GaN, InN, AIN, and  Read more...

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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: M E Levinshteĭn; Sergey L Rumyantsev; Michael Shur
ISBN: 0471358274 9780471358275
OCLC Number: 44174231
Description: xvii, 194 pages : illustrations ; 25 cm
Contents: Gallium nitride (GaN) / V. Bougrov [and others] --
Aluminum nitride (AIN) / Yu. Goldberg --
Indium nitride (InN) / A. Zubrilov --
Boron nitride (BN) / S. Rumyantsev [and others] --
Silicon carbide (SiC) / Yu. Goldberg, M. Levinshtein, and S. Rumyantsev --
Silicon-germanium (Si[subscript 1-x]Ge[subscript x]) / F. Schäffler.
Responsibility: edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur.
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"Six contributed chapters describe the key properties of emerging semiconductor materials systems with exciting potential..." (SciTech Book News Vol. 25, No. 2 June 2001)

 
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