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Radiation Defect Engineering.

Author: Kozlovski Vitali; Abrosimova Vera
Publisher: Singapore : World Scientific, 2005.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the  Read more...
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Genre/Form: Electronic books
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Kozlovski Vitali; Abrosimova Vera
ISBN: 9789812703194 9812703195
OCLC Number: 476064341
Description: 1 online resource (262 pages)
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Abstract:

The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials.

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