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Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon

Author: John Albers; United States. Defense Advanced Research Projects Agency.; United States. National Bureau of Standards.
Publisher: Gaithersburg, MD : U.S. Dept. of Commerce, National Bureau of Standards, 1987.
Series: NBS special publication, 400-79.; Semiconductor measurement technology.
Edition/Format:   Print book : National government publication : EnglishView all editions and formats
Database:WorldCat
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Material Type: Government publication, National government publication
Document Type: Book
All Authors / Contributors: John Albers; United States. Defense Advanced Research Projects Agency.; United States. National Bureau of Standards.
OCLC Number: 18906976
Notes: Distributed to depository libraries in microfiche.
No longer available for sale by the Supt. of Docs.
"September 1987."
Description: iv, 667 pages : illustrations ; 28 cm.
Series Title: NBS special publication, 400-79.; Semiconductor measurement technology.
Responsibility: John Albers.

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Primary Entity

<http://www.worldcat.org/oclc/18906976> # Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon
    a schema:CreativeWork, schema:Book ;
   library:oclcnum "18906976" ;
   library:placeOfPublication <http://experiment.worldcat.org/entity/work/data/18316488#Place/gaithersburg_md> ; # Gaithersburg, MD
   library:placeOfPublication <http://id.loc.gov/vocabulary/countries/mdu> ;
   schema:about <http://experiment.worldcat.org/entity/work/data/18316488#Topic/ions_implantation_simulation_par_ordinateur> ; # Ions--Implantation--Simulation par ordinateur
   schema:about <http://dewey.info/class/602.18/e19/> ;
   schema:about <http://id.worldcat.org/fast/1025819> ; # Monte Carlo method
   schema:about <http://experiment.worldcat.org/entity/work/data/18316488#Topic/semiconductor_doping_computer_simulation> ; # Semiconductor doping--Computer simulation
   schema:about <http://id.worldcat.org/fast/1112125> ; # Semiconductor doping--Computer simulation
   schema:about <http://id.worldcat.org/fast/978591> ; # Ion implantation--Computer simulation
   schema:about <http://experiment.worldcat.org/entity/work/data/18316488#Topic/monte_carlo_methode_de> ; # Monte Carlo, méthode de
   schema:about <http://experiment.worldcat.org/entity/work/data/18316488#Topic/ion_implantation_computer_simulation> ; # Ion implantation--Computer simulation
   schema:about <http://experiment.worldcat.org/entity/work/data/18316488#Topic/semiconducteurs_dopage_simulation_par_ordinateur> ; # Semiconducteurs--Dopage--Simulation par ordinateur
   schema:bookFormat bgn:PrintBook ;
   schema:contributor <http://viaf.org/viaf/132454617> ; # United States. Defense Advanced Research Projects Agency.
   schema:contributor <http://viaf.org/viaf/126653902> ; # United States. National Bureau of Standards.
   schema:creator <http://experiment.worldcat.org/entity/work/data/18316488#Person/albers_john> ; # John Albers
   schema:datePublished "1987" ;
   schema:exampleOfWork <http://worldcat.org/entity/work/id/18316488> ;
   schema:genre "Government publication"@en ;
   schema:genre "National government publication"@en ;
   schema:inLanguage "en" ;
   schema:isPartOf <http://experiment.worldcat.org/entity/work/data/18316488#Series/nbs_special_publication> ; # NBS special publication ;
   schema:isPartOf <http://experiment.worldcat.org/entity/work/data/18316488#Series/semiconductor_measurement_technology> ; # Semiconductor measurement technology.
   schema:name "Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon"@en ;
   schema:productID "18906976" ;
   schema:publication <http://www.worldcat.org/title/-/oclc/18906976#PublicationEvent/gaithersburg_md_u_s_dept_of_commerce_national_bureau_of_standards_1987> ;
   schema:publisher <http://experiment.worldcat.org/entity/work/data/18316488#Agent/u_s_dept_of_commerce_national_bureau_of_standards> ; # U.S. Dept. of Commerce, National Bureau of Standards
   wdrs:describedby <http://www.worldcat.org/title/-/oclc/18906976> ;
    .


Related Entities

<http://experiment.worldcat.org/entity/work/data/18316488#Agent/u_s_dept_of_commerce_national_bureau_of_standards> # U.S. Dept. of Commerce, National Bureau of Standards
    a bgn:Agent ;
   schema:name "U.S. Dept. of Commerce, National Bureau of Standards" ;
    .

<http://experiment.worldcat.org/entity/work/data/18316488#Person/albers_john> # John Albers
    a schema:Person ;
   schema:familyName "Albers" ;
   schema:givenName "John" ;
   schema:name "John Albers" ;
    .

<http://experiment.worldcat.org/entity/work/data/18316488#Place/gaithersburg_md> # Gaithersburg, MD
    a schema:Place ;
   schema:name "Gaithersburg, MD" ;
    .

<http://experiment.worldcat.org/entity/work/data/18316488#Series/nbs_special_publication> # NBS special publication ;
    a bgn:PublicationSeries ;
   schema:hasPart <http://www.worldcat.org/oclc/18906976> ; # Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon
   schema:name "NBS special publication ;" ;
    .

<http://experiment.worldcat.org/entity/work/data/18316488#Series/semiconductor_measurement_technology> # Semiconductor measurement technology.
    a bgn:PublicationSeries ;
   schema:hasPart <http://www.worldcat.org/oclc/18906976> ; # Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon
   schema:name "Semiconductor measurement technology." ;
   schema:name "Semiconductor measurement technology" ;
    .

<http://experiment.worldcat.org/entity/work/data/18316488#Topic/ions_implantation_simulation_par_ordinateur> # Ions--Implantation--Simulation par ordinateur
    a schema:Intangible ;
   schema:name "Ions--Implantation--Simulation par ordinateur"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/18316488#Topic/monte_carlo_methode_de> # Monte Carlo, méthode de
    a schema:Intangible ;
   schema:name "Monte Carlo, méthode de"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/18316488#Topic/semiconducteurs_dopage_simulation_par_ordinateur> # Semiconducteurs--Dopage--Simulation par ordinateur
    a schema:Intangible ;
   schema:name "Semiconducteurs--Dopage--Simulation par ordinateur"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/18316488#Topic/semiconductor_doping_computer_simulation> # Semiconductor doping--Computer simulation
    a schema:Intangible ;
   schema:hasPart <http://id.loc.gov/authorities/subjects/sh85119890> ;
   schema:name "Semiconductor doping--Computer simulation"@en ;
    .

<http://id.worldcat.org/fast/1025819> # Monte Carlo method
    a schema:Intangible ;
   schema:name "Monte Carlo method"@en ;
    .

<http://id.worldcat.org/fast/1112125> # Semiconductor doping--Computer simulation
    a schema:Intangible ;
   schema:name "Semiconductor doping--Computer simulation"@en ;
    .

<http://id.worldcat.org/fast/978591> # Ion implantation--Computer simulation
    a schema:Intangible ;
   schema:name "Ion implantation--Computer simulation"@en ;
    .

<http://viaf.org/viaf/126653902> # United States. National Bureau of Standards.
    a schema:Organization ;
   schema:name "United States. National Bureau of Standards." ;
    .

<http://viaf.org/viaf/132454617> # United States. Defense Advanced Research Projects Agency.
    a schema:Organization ;
   schema:name "United States. Defense Advanced Research Projects Agency." ;
    .

<http://www.worldcat.org/title/-/oclc/18906976>
    a genont:InformationResource, genont:ContentTypeGenericResource ;
   schema:about <http://www.worldcat.org/oclc/18906976> ; # Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon
   schema:dateModified "2016-05-09" ;
   void:inDataset <http://purl.oclc.org/dataset/WorldCat> ;
    .


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