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Semi-insulating III-V materials, Ixtapa, Mexico, 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21-24 April 1992

Author: C J Miner; W Ford; Eicke R Weber
Publisher: Bristol ; Philadelphia : Institute of Physics Pub., ©1993.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
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This volume features the proceedings of the 7th Semi-Insulating Materials Conference, held in Mexico in April 1992. The contributors discussed characterization, theory, device applications and  Read more...

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Genre/Form: Conference papers and proceedings
Congresses
Material Type: Conference publication, Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: C J Miner; W Ford; Eicke R Weber
ISBN: 0750302429 9780750302425
OCLC Number: 28507318
Description: xvi, 344 pages : illustrations ; 25 cm
Contents: Plenary presentation: Device applications of semi-insulating III-V materials: the changing demand (Jay). Defects: Recent changes in our understanding of EL2 in GaAs (Baraff); Hetero-antisite defects in III-V materials (Omling); Dynamic characteristics of dislocations and mechanical behaviour of III-V materials (Sumino and Yonenaga); Microdefect studies of Fe-doped semi-insulating InP (Fornari et al); Carrier control by neutron-transmutation doping of semi-insulating GaAs (Benchiguer et al); Evidence for the antisite defect BAs in SI and B co-implanted and B iplanted SI LEC--GaAs crystal (Wang et al); Properties of high-resistivity Li-diffused GaAs (Gislason); Semi-insulating InP obtained by co-implantation of Mg and Ti (Salvi et al); The activation of MeV Si+ implants in Si-GaAs+ (Chengzhou at al). Bulk Growth: Current issues in the bulk growth of SI III-V materials (Mueller et al); Low-dislocation 4" ... GaAs single crystal growth under arsenic atmosphere (Kawase et al); Incorporation/Extraction of carbon and boron during semi-insulating LEC GaAs growth: roles of hydrogen and carbon monoxide in the Puller atmosphere (Nishio and Fujita); Structural and electrical characteristics of undoped LEC GaAs crystals grown from slightly Ga-rich melts: a new approach (Weyher et al); Improved uniformity of Si-VB GaAs by annealing (Freidenrich et al); Photoluminescence investigation of ingot- and wafer-annealing effects in semi-insulating GaAs (Ka et al). Epitaxial Growth: MBE heterostructure device instabilities related to interfacial carbon impurities (Gray et al); S.I.InP:Fe Hydride-VPE for mushroom type lasers (G^"obel et al); Hydride vapour phase epitaxial regrowth of SI-InP:Fe on non-planar surfaces for device fabrication (Lourdudoss and Kjebon). Low temperature growth: relation between structure and lifetime and minority carriers in MBE BaAs grown at low temperatures (Liliental-Weber et al); Conductivity and Hall-effect measurements on MBE GaAs grown at low temperatures (Look et al); Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs (Manasreh et al); Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique (Lau et al); Semi-insulating epitaxial semiconductors: the case of InP (Garcia et al); Structure investigations of low-temperature MBE grown InAlAs layers on InP substrate (Werner et al). Substrates: Nondestructive high resolution resistivity topography of semi-insulating GaAs and InP wafers (Jantz et al); Optical wafer level mapping for MMIC processing (Kanber et al); X-ray topography used as a routine tool in the evaluation of the crystal quality of GaAs substrate wafers (Bassignana and Macquistan); Photoluminescence pre-screenng of LEC semi-insulating GaAs substrates for the potential backgating performance of MESFET circuits (Miner et al); Fe doped semi-insulatinig indium phosphide substrate characterization for device applications (Grattepain and Huber); Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers (Yamada); Scanning birefringence mapping of semi-insulating GaAs wafers (Clayton et al); Dark-field infrared microscopy investigations of precipitates in bulk gallium arsenide (Brozel and Tuezemen). Characterization: The correlation of reverse contrast absorption imaging with photo-quenchable deep acceptor centres in semi-insulating LEC GaAs (Tuezemen and Brozel); Enhanced and persistent photocurrents in bulk semi-insulating GaAs at low temperatures (Michel); Time evolution of photo-EPR and photo-electrical data on bulk semi-insulating GaAs (Benchiguer et al); The role of deep traps in photoconductivity transients in S.I. GaAs (Santic et al); Study of deep acceptor states in undoped semi-insulating GaAs with low carbon content by transient spectroscopy techniques (Dubecky et al); Properties of the Fe acceptor level in InP under hydrostatic pressure (Babinski et al); Infrared absorption in proton- and deuteron implanted semi-insulating InP:Fe (Fischer et al); Investigation of deep-level states in bulk and low temperature MBE semi-insulating GaAs by admittance transient spectroscopy (Dubecky et al); Characterization of semi-insulating InP:Cu (Leon et al); Effect of micro-uniformity on electron mobility of LEC undoped SI-GaAs crystals (Wang et al); Photoreflectance characterization of LEC-SI GaAs and Fe-InP (Bhimnathwala and Borrego); Characterization of active channel processing by PIMR (Heimlich et al); NMR Characterization of stoichiometry related point defects in SI-GaAs (Suemitsu) . Devices: Vth control in GaAs by substrate parameters (Kaminaka et al); Analytical model of the frequency-dependent output conductance of GaAs MESFETs on semi-insulating substrates (Shulman); Analysis of the steady and transient characteristics of the leakage current in GaAs integrated circuits (Gual et al); Numerical simulation of generation in n-SI-n structures (Viallet et al); I-V behaviour of p/SI-InP:Fe/n and p/n/Si-InP:Fe/n configurations related to leakage current in buried heterostructure lasers with current blocking SI-InP:Fe (Lourdudoss et al); Characterization of deep level traps in ultrasubmicron modulation-doped field-effect transistors on InP substrate using improved photo-inducted current spectroscopy (PICS) (Sung and Das).
Other Titles: Semi-insulating III-V Materials, 1992 proceedings of the 7th Conference on.
Responsibility: edited by C.J. Miner, W. Ford, and E.R. Weber.

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