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SiGe, GaAs, and InP heterojunction bipolar transistors

Author: J S Yuan
Publisher: New York : Wiley, ©1999.
Series: Wiley series in microwave and optical engineering.
Edition/Format:   eBook : Document : EnglishView all editions and formats
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Yuan, Jiann S., 1959-
SiGe, GaAs, and InP heterojunction bipolar transistors.
New York : Wiley, ©1999
(DLC) 98038194
(OCoLC)39614803
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: J S Yuan
OCLC Number: 607128273
Reproduction Notes: Electronic reproduction. [S.l.] : HathiTrust Digital Library, 2010. MiAaHDL
Description: 1 online resource (xvii, 463 pages) : illustrations.
Details: Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
Series Title: Wiley series in microwave and optical engineering.
Responsibility: Jiann S. Yuan.

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