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SiGe heterojunction bipolar transistors

Author: Peter Ashburn
Publisher: Chichester : Wiley, 2003.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:

Features SiGe products which include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications. This book describes the physics and technology of SiGe HBTs,  Read more...

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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Peter Ashburn
ISBN: 0470848383 9780470848388
OCLC Number: 249364062
Description: XXIV, 262 Seiten : Diagramme ; 24 cm
Contents: Preface.Physical Constants Properties of Silicon and Silicon-Germanium.List of Symbols.1. Introduction.2. Basic Bipolar Transistor Theory.3. Heavy Doping Effects.4. Second-Order Effects.5. High-Frequency Performance.6. Polysilicon Emitters.7. Properties and Growth of Silicon-Germanium.8. Silicon-Germanium Heterojunction Bipolar Transistors.9. Silicon Bipolar Technology.10. Silicon-Germanium Heterojunction Bipolar Technology.11. Compact Models of Bipolar Transistors.12. Optimization of Silicon and Silicon-Germanium Bipolar Technologies.References.Index.
Responsibility: Peter Ashburn.
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