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SiGe heterojunction bipolar transistors

Author: Peter Ashburn
Publisher: Hoboken, NJ : John Wiley & Sons, ©2003.
Edition/Format:   Book : EnglishView all editions and formats
Database:WorldCat
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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Peter Ashburn
ISBN: 0470848383 9780470848388
OCLC Number: 53020155
Description: xxiv, 262 p. : ill. ; 24 cm.
Contents: Introduction --
Basic bipolar transistor theory --
Heavy doping effects --
Second-order effects --
High-frequency performance --
Polysilicon emitters --
Properties and growth of silicon-germanium --
Silicon-germanium heterojunction bipolar transistors --
Silicon bipolar technology --
Silicon-germanium heterojunction bipolar technology --
Compact models of bipolar transistors --
Optimization of silicon and silicon-germanium bipolar technologies.
Other Titles: Silicon-germanium heterojunction bipolar transistors
Responsibility: Peter Ashburn.
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