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SiGe heterojunction bipolar transistors

作者: Peter Ashburn
出版商: Hoboken, NJ : John Wiley & Sons, ©2003.
版本/格式:   圖書 : 英語所有版本和格式的總覽
資料庫:WorldCat
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資料類型: 網際網路資源
文件類型: 圖書, 網路資源
所有的作者/貢獻者: Peter Ashburn
ISBN: 0470848383 9780470848388
OCLC系統控制編碼: 53020155
描述: xxiv, 262 p. : ill. ; 24 cm.
内容: Introduction --
Basic bipolar transistor theory --
Heavy doping effects --
Second-order effects --
High-frequency performance --
Polysilicon emitters --
Properties and growth of silicon-germanium --
Silicon-germanium heterojunction bipolar transistors --
Silicon bipolar technology --
Silicon-germanium heterojunction bipolar technology --
Compact models of bipolar transistors --
Optimization of silicon and silicon-germanium bipolar technologies.
其他題名: Silicon-germanium heterojunction bipolar transistors
責任: Peter Ashburn.
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