skip to content
Silicon carbide power devices Preview this item
ClosePreview this item
Checking...

Silicon carbide power devices

Author: B Jayant Baliga; World Scientific (Firm)
Publisher: Singapore ; Hackensack, N.J. : World Scientific, ©2005.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses  Read more...
Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

Find a copy online

Links to this item

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Genre/Form: Electronic books
Additional Physical Format: Print version:
Baliga, B. Jayant.
Silicon Carbide Power Devices.
Singapore : World Scientific Publishing Company, ©2006
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: B Jayant Baliga; World Scientific (Firm)
ISBN: 9812774521 9789812774521
OCLC Number: 275174225
Description: 1 online resource (xxi, 503 pages) : illustrations (some color)
Contents: Preface; Contents; Chapter 1 Introduction; 1.1 Ideal and Typical Power Device Characteristics; 1.2 Unipolar Power Devices; 1.3 Bipolar Power Devices; 1.4 MOS-Bipolar Power Devices; 1.5 Ideal Drift Region for Unipolar Power Devices; 1.6 Summary; References; Chapter 2 Material Properties and Technology; 2.1 Fundamental Properties; 2.1.1 Energy Band Gap; 2.1.2 Impact Ionization Coefficients; 2.1.3 Electron Mobility; 2.2 Other Properties Relevant to Power Devices; 2.2.1 Donor and Acceptor Ionization Energy Levels; 2.2.2 Recombination Lifetimes; 2.2.3 Metal-Semiconductor Contacts. 2.3 Fabrication Technology2.3.1 Diffusion Coefficients and Solubility of Dopants; 2.3.2 Ion Implantation and Annealing; 2.3.3 Gate Oxide Formation; 2.3.4 Reactive Ion Etching of Trenches; 2.4 Summary; References; Chapter 3 Breakdown Voltage; 3.1 One-Dimensional Abrupt Junction; 3.2 Schottky Diode Edge Termination; 3.2.1 Planar Schottky Diode Edge Termination; 3.2.2 Planar Schottky Diode with Field Plate Edge Temination; 3.2.3 Schottky Diode with Floating Metal Rings; 3.2.4 Schottky Diode Edge Termination with Argon Implant; 3.2.5 Schottky Diode Edge Termination with RESP Region. 3.3 P-N Junction Edge Termination3.3.1 Planar Junction Edge Termination; 3.3.2 Planar Junction Edge Termination with Field Plate; 3.3.3 Planar Junction Edge Termination with Floating Rings; 3.3.4 Planar Junction Edge Termination with P-Extension; 3.4 Summary; References; Chapter 4 PiN Rectifiers; 4.1 One-Dimensional PiN Structure; 4.2 Experimental Results; 4.3 Summary; References; Chapter 5 Schottky Rectifiers; 5.1 Schottky Rectifier Structure: Forward Conduction; 5.1.1 Forward Conduction: Simulation Results; 5.1.2 Forward Conduction: Experimental Results. 5.2 Schottky Rectifier Structure: Reverse Blocking5.3 Schottky Rectifier Structure: Impact of Defects; 5.4 Reliability Issues; 5.5 Summary; References; Chapter 6 Shielded Schottky Rectifiers; 6.1 Junction Barrier Schottky (JBS) Rectifier Structure; 6.1.1 JBS Rectifier Structure: Forward Conduction Model; 6.1.2 JBS Rectifier Structure: Reverse Leakage Model; 6.1.3 JBS Rectifier Structure: Simulation Results; 6.1.4 JBS Rectifier Structure: Experimental Results; 6.2 Trench MOS Barrier Schottky (TMBS) Rectifier Structure; 6.2.1 TMBS Rectifier Structure: Simulation Results. 6.3 Trench Schottky Barrier Schottky (TSBS) Rectifier Structure6.3.1 TSBS Rectifier Structure: Simulation Results; 6.3.2 TSBS Rectifiers: Experimental Results; 6.4 Summary; References; Chapter 7 Metal-Semiconductor Field Effect Transistors; 7.1 Trench Junction (Metal-Semiconductor) FET Structure; 7.1.1 Forward Blocking; 7.1.2 On-State; 7.2 Trench MESFET Structure: Simulation Results; 7.2.1 On-State Characteristics; 7.2.2 Blocking Characteristics; 7.2.3 Output Characteristics; 7.3 JFET Structure: Simulation Results; 7.4 Planar MESFET Structure; 7.4.1 Forward Blocking; 7.4.2 On-State Resistance.
Responsibility: B. Jayant Baliga.

Abstract:

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Mater.

Reviews

User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.

Similar Items

Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


Primary Entity

<http://www.worldcat.org/oclc/275174225> # Silicon carbide power devices
    a schema:CreativeWork, schema:MediaObject, schema:Book ;
    library:oclcnum "275174225" ;
    library:placeOfPublication <http://experiment.worldcat.org/entity/work/data/48631693#Place/hackensack_n_j> ; # Hackensack, N.J.
    library:placeOfPublication <http://id.loc.gov/vocabulary/countries/si> ;
    library:placeOfPublication <http://experiment.worldcat.org/entity/work/data/48631693#Place/singapore> ; # Singapore
    rdfs:comment "Warning: This malformed URI has been treated as a string - 'http://ebookcentral.proquest.com/lib/unt/detail.action?docID=1681716";'" ;
    schema:about <http://id.loc.gov/authorities/subjects/sh85122520> ; # Silicon carbide--Electric properties
    schema:about <http://id.worldcat.org/fast/1112198> ; # Semiconductors
    schema:about <http://dewey.info/class/621.38152/e22/> ;
    schema:about <http://id.worldcat.org/fast/1118659> ; # Silicon carbide--Electric properties
    schema:bookFormat schema:EBook ;
    schema:contributor <http://viaf.org/viaf/126207106> ; # World Scientific (Firm)
    schema:copyrightYear "2005" ;
    schema:creator <http://viaf.org/viaf/108228435> ; # B. Jayant Baliga
    schema:datePublished "2005" ;
    schema:description "Preface; Contents; Chapter 1 Introduction; 1.1 Ideal and Typical Power Device Characteristics; 1.2 Unipolar Power Devices; 1.3 Bipolar Power Devices; 1.4 MOS-Bipolar Power Devices; 1.5 Ideal Drift Region for Unipolar Power Devices; 1.6 Summary; References; Chapter 2 Material Properties and Technology; 2.1 Fundamental Properties; 2.1.1 Energy Band Gap; 2.1.2 Impact Ionization Coefficients; 2.1.3 Electron Mobility; 2.2 Other Properties Relevant to Power Devices; 2.2.1 Donor and Acceptor Ionization Energy Levels; 2.2.2 Recombination Lifetimes; 2.2.3 Metal-Semiconductor Contacts."@en ;
    schema:description "Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Mater."@en ;
    schema:exampleOfWork <http://worldcat.org/entity/work/id/48631693> ;
    schema:genre "Electronic books"@en ;
    schema:inLanguage "en" ;
    schema:isSimilarTo <http://worldcat.org/entity/work/data/48631693#CreativeWork/silicon_carbide_power_devices> ;
    schema:name "Silicon carbide power devices"@en ;
    schema:productID "275174225" ;
    schema:publication <http://www.worldcat.org/title/-/oclc/275174225#PublicationEvent/singapore_hackensack_n_j_world_scientific_2005> ;
    schema:publisher <http://experiment.worldcat.org/entity/work/data/48631693#Agent/world_scientific> ; # World Scientific
    schema:url <https://ebookcentral.proquest.com/lib/ben/detail.action?docID=1681716> ;
    schema:url <http://ebookcentral.proquest.com/lib/ucm/detail.action?docID=1681716> ;
    schema:url <http://public.eblib.com/choice/publicfullrecord.aspx?p=1681716> ;
    schema:url "http://ebookcentral.proquest.com/lib/unt/detail.action?docID=1681716";" ;
    schema:url <http://ebookcentral.proquest.com/lib/warw/detail.action?docID=1681716> ;
    schema:url <https://ebookcentral.proquest.com/lib/ucm/detail.action?docID=1681716> ;
    schema:url <http://ebooks.worldscinet.com/engineering/9789812774521/9789812774521.shtml> ;
    schema:workExample <http://worldcat.org/isbn/9789812774521> ;
    wdrs:describedby <http://www.worldcat.org/title/-/oclc/275174225> ;
    .


Related Entities

<http://experiment.worldcat.org/entity/work/data/48631693#Agent/world_scientific> # World Scientific
    a bgn:Agent ;
    schema:name "World Scientific" ;
    .

<http://experiment.worldcat.org/entity/work/data/48631693#Place/hackensack_n_j> # Hackensack, N.J.
    a schema:Place ;
    schema:name "Hackensack, N.J." ;
    .

<http://id.loc.gov/authorities/subjects/sh85122520> # Silicon carbide--Electric properties
    a schema:Intangible ;
    schema:name "Silicon carbide--Electric properties"@en ;
    .

<http://id.worldcat.org/fast/1112198> # Semiconductors
    a schema:Intangible ;
    schema:name "Semiconductors"@en ;
    .

<http://id.worldcat.org/fast/1118659> # Silicon carbide--Electric properties
    a schema:Intangible ;
    schema:name "Silicon carbide--Electric properties"@en ;
    .

<http://viaf.org/viaf/108228435> # B. Jayant Baliga
    a schema:Person ;
    schema:birthDate "1948" ;
    schema:familyName "Baliga" ;
    schema:givenName "B. Jayant" ;
    schema:name "B. Jayant Baliga" ;
    .

<http://viaf.org/viaf/126207106> # World Scientific (Firm)
    a schema:Organization ;
    schema:name "World Scientific (Firm)" ;
    .

<http://worldcat.org/entity/work/data/48631693#CreativeWork/silicon_carbide_power_devices>
    a schema:CreativeWork ;
    rdfs:label "Silicon Carbide Power Devices." ;
    schema:description "Print version:" ;
    schema:isSimilarTo <http://www.worldcat.org/oclc/275174225> ; # Silicon carbide power devices
    .

<http://worldcat.org/isbn/9789812774521>
    a schema:ProductModel ;
    schema:isbn "9812774521" ;
    schema:isbn "9789812774521" ;
    .

<https://ebookcentral.proquest.com/lib/ben/detail.action?docID=1681716>
    rdfs:comment "(access limited to Benedictine University patrons)" ;
    .


Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.