skip to content
Strain-engineered MOSFETs Preview this item
ClosePreview this item
Checking...

Strain-engineered MOSFETs

Author: C K Maiti; T K Maiti
Publisher: Boca Raton : Taylor & Francis, ©2013.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process  Read more...
Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

 

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Document Type: Book
All Authors / Contributors: C K Maiti; T K Maiti
ISBN: 9781466500556 1466500557
OCLC Number: 809563361
Description: xix, 300 pages : illustrations ; 24 cm
Contents: IntroductionTechnology ScalingSubstrate-Induced Strain EngineeringProcess-Induced Stress EngineeringElectronic Properties of Strained SemiconductorsStrain-Engineered MOSFETsNoise in Strain-Engineered DevicesTechnology CAD of Strain-Engineered MOSFETsReliability of Strain-Engineered MOSFETsProcess Compact ModellingProcess-Aware DesignSummaryAdditional ReadingSubstrate-Induced Strain Engineering in CMOS TechnologySubstrate EngineeringStrained SiGe Film GrowthStrained SiGe:C Film GrowthStrained Si Films on Relaxed Si1-xGexStrained Si on SOIStrained Ge Film GrowthStrained Ge MOSFETsHeterostructure SiGe/SiGe:C Channel MOSFETsStrained Si MOSFETsHybrid Orientation TechnologySummaryReview QuestionsReferencesProcess-Induced Stress Engineering in CMOS TechnologyStress EngineeringSi1-xGex in Source/DrainSi1-yCy in Source/DrainShallow Trench Isolation (STI)Contact Etch Stop Layer (CESL)SilicidationStress Memorisation Technique (SMT)Global vs. Local StrainBEOL Stress: Through-Silicon ViaTSV ModellingSummaryReview QuestionsReferencesElectronic Properties of Strain-Engineered SemiconductorsBasics of Stress EngineeringStress-Strain RelationshipsStrain-Engineered MOSFETs: CurrentEnergy Gap and Band StructureSilicon Conduction BandSilicon Valence BandBand Structure under StressPiezoresistive Mobility ModelStrain-Induced Mobility ModelImplementation of Mobility ModelSummaryReview QuestionsReferencesStrain-Engineered MOSFETsProcess IntegrationMultigate TransistorsDouble-Gate MOSFETΩ-FinFETTri-Gate FinFETFinFETs Using Gate-Induced StressStress-Engineered FinFETsLayout DependenceSummaryReview QuestionsReferencesNoise in Strain-Engineered Devices, C. MukherjeeNoise MechanismsFundamental Noise Sources1/f Noise in MOSFETsNoise Characterisation in MOSFETsStrain Effects on Noise in MOSFETsNoise in Strain-Engineered MOSFETsNoise in Multigate FETsNoise in Silicon Nanowire Transistors (SNWTs)Noise in Heterojunction Bipolar TransistorsSummaryReview QuestionsReferencesTechnology CAD of Strain-Engineered MOSFETsTCAD CalibrationSimulation of Strain-Engineered MOSFETsDC PerformanceAC PerformanceHybrid Orientation Technology for Strain-Engineered MOSFETsSimulation of Embedded SiGe MOSFETsSummaryReview QuestionsReferencesReliability and Degradation of Strain-Engineered MOSFETsNBTI in Strain-Engineered p-MOSFETsSimulation of NBTI in p-MOSFETsHCI in Strain-Engineered n-MOSFETsSimulation of HCI in n-MOSFETsReliability Issues in FinFETsSummaryReview QuestionsReferencesProcess Compact Modelling of Strain-Engineered MOSFETsProcess VariationPredictive Technology ModellingProcess-Aware Design for ManufacturingProcess Compact ModelProcess-Aware SPICE Parameter ExtractionSummaryReview QuestionsReferencesProcess-Aware Design of Strain-Engineered MOSFETsProcess Design Co-OptimisationClassifications of VariationDesigns for Manufacturing and Yield OptimisationPerformance OptimisationManufacturability OptimisationSummaryReview QuestionsReferencesConclusionsIndex
Responsibility: C.K. Maiti, T.K. Maiti.
More information:

Abstract:

"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--

Reviews

Editorial reviews

Publisher Synopsis

"... an immensely useful book for the researcher in this field and even for some like me who do not work exactly in this area. Any scientist interested in strain modulation of device properties will Read more...

 
User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


Primary Entity

<http://www.worldcat.org/oclc/809563361> # Strain-engineered MOSFETs
    a schema:Book, schema:CreativeWork ;
   library:oclcnum "809563361" ;
   library:placeOfPublication <http://experiment.worldcat.org/entity/work/data/1167166801#Place/boca_raton> ; # Boca Raton
   library:placeOfPublication <http://id.loc.gov/vocabulary/countries/flu> ;
   schema:about <http://id.worldcat.org/fast/1134288> ; # Strains and stresses
   schema:about <http://dewey.info/class/621.3815284/e23/> ;
   schema:about <http://experiment.worldcat.org/entity/work/data/1167166801#Topic/technology_&_engineering_material_science> ; # TECHNOLOGY & ENGINEERING--Material Science
   schema:about <http://experiment.worldcat.org/entity/work/data/1167166801#Topic/technology_&_engineering_electronics_microelectronics> ; # TECHNOLOGY & ENGINEERING--Electronics--Microelectronics
   schema:about <http://experiment.worldcat.org/entity/work/data/1167166801#Topic/technology_&_engineering_electronics_circuits_general> ; # TECHNOLOGY & ENGINEERING--Electronics--Circuits--General
   schema:about <http://id.loc.gov/authorities/subjects/sh85128457> ; # Strains and stresses
   schema:about <http://id.worldcat.org/fast/975563> ; # Integrated circuits--Fault tolerance
   schema:about <http://id.loc.gov/authorities/subjects/sh96008890> ; # Integrated circuits--Fault tolerance
   schema:about <http://experiment.worldcat.org/entity/work/data/1167166801#Topic/metal_oxide_semiconductor_field_effect_transistors_reliability> ; # Metal oxide semiconductor field-effect transistors--Reliability
   schema:bookFormat bgn:PrintBook ;
   schema:contributor <http://viaf.org/viaf/267061509> ; # T. K. Maiti
   schema:copyrightYear "2013" ;
   schema:creator <http://viaf.org/viaf/51914909> ; # C. K. Maiti
   schema:datePublished "2012" ;
   schema:description ""This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--"@en ;
   schema:exampleOfWork <http://worldcat.org/entity/work/id/1167166801> ;
   schema:image <http://jacketsearch.tandf.co.uk/common/jackets/covers/websmall/978146650/9781466500556.jpg> ;
   schema:inLanguage "en" ;
   schema:name "Strain-engineered MOSFETs"@en ;
   schema:productID "809563361" ;
   schema:publication <http://www.worldcat.org/title/-/oclc/809563361#PublicationEvent/boca_raton_taylor_&_francis_2013> ;
   schema:publisher <http://experiment.worldcat.org/entity/work/data/1167166801#Agent/taylor_&_francis> ; # Taylor & Francis
   schema:workExample <http://worldcat.org/isbn/9781466500556> ;
   umbel:isLike <http://bnb.data.bl.uk/id/resource/GBB288764> ;
   wdrs:describedby <http://www.worldcat.org/title/-/oclc/809563361> ;
    .


Related Entities

<http://experiment.worldcat.org/entity/work/data/1167166801#Agent/taylor_&_francis> # Taylor & Francis
    a bgn:Agent ;
   schema:name "Taylor & Francis" ;
    .

<http://experiment.worldcat.org/entity/work/data/1167166801#Topic/metal_oxide_semiconductor_field_effect_transistors_reliability> # Metal oxide semiconductor field-effect transistors--Reliability
    a schema:Intangible ;
   schema:hasPart <http://id.loc.gov/authorities/subjects/sh85084065> ;
   schema:name "Metal oxide semiconductor field-effect transistors--Reliability"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/1167166801#Topic/technology_&_engineering_electronics_circuits_general> # TECHNOLOGY & ENGINEERING--Electronics--Circuits--General
    a schema:Intangible ;
   schema:name "TECHNOLOGY & ENGINEERING--Electronics--Circuits--General"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/1167166801#Topic/technology_&_engineering_electronics_microelectronics> # TECHNOLOGY & ENGINEERING--Electronics--Microelectronics
    a schema:Intangible ;
   schema:name "TECHNOLOGY & ENGINEERING--Electronics--Microelectronics"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/1167166801#Topic/technology_&_engineering_material_science> # TECHNOLOGY & ENGINEERING--Material Science
    a schema:Intangible ;
   schema:name "TECHNOLOGY & ENGINEERING--Material Science"@en ;
    .

<http://id.loc.gov/authorities/subjects/sh85128457> # Strains and stresses
    a schema:Intangible ;
   schema:name "Strains and stresses"@en ;
    .

<http://id.loc.gov/authorities/subjects/sh96008890> # Integrated circuits--Fault tolerance
    a schema:Intangible ;
   schema:name "Integrated circuits--Fault tolerance"@en ;
    .

<http://id.worldcat.org/fast/1134288> # Strains and stresses
    a schema:Intangible ;
   schema:name "Strains and stresses"@en ;
    .

<http://id.worldcat.org/fast/975563> # Integrated circuits--Fault tolerance
    a schema:Intangible ;
   schema:hasPart <http://id.loc.gov/authorities/subjects/sh96008890> ; # Integrated circuits--Fault tolerance
   schema:name "Integrated circuits--Fault tolerance"@en ;
    .

<http://viaf.org/viaf/267061509> # T. K. Maiti
    a schema:Person ;
   schema:familyName "Maiti" ;
   schema:givenName "T. K." ;
   schema:name "T. K. Maiti" ;
    .

<http://viaf.org/viaf/51914909> # C. K. Maiti
    a schema:Person ;
   schema:familyName "Maiti" ;
   schema:givenName "C. K." ;
   schema:name "C. K. Maiti" ;
    .

<http://worldcat.org/isbn/9781466500556>
    a schema:ProductModel ;
   schema:isbn "1466500557" ;
   schema:isbn "9781466500556" ;
    .


Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.