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Surface and interface study of PdCr/SiC Schottky diode gas sensor annealed at 425 °C

Author: Liang Yu Chen; Lewis Research Center,
Publisher: Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, May 1998.
Series: NASA technical memorandum, 1998-107429.
Edition/Format:   eBook : Document : Conference publication : National government publication : English
Database:WorldCat
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Genre/Form: Online resources
Additional Physical Format: Print version:
Surface and interface study of pdcr/sic schottky diode gas sensor annealed at 425 c
(OCoLC)213890143
Microfiche version:
Chen, Liang Yu.
Surface and interface study of PdCr/SiC schottky diode gas sensor annealed at 425C̊
(OCoLC)41148977
Material Type: Conference publication, Document, Government publication, National government publication, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Liang Yu Chen; Lewis Research Center,
OCLC Number: 994296897
Notes: "May 1998."
"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
Description: 1 online resource (6 pages) : illustrations.
Series Title: NASA technical memorandum, 1998-107429.
Responsibility: Liang-Yu Chen [and three others].

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