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Technology evolution for silicon nano-electronics : selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan

Author: Seiichi Miyazaki; Hitoshi Tabata
Publisher: Stafa-Zurich, Switzerland ; Enfield, NH : Trans Tech Publications, ©2011.
Series: Key engineering materials, v. 470.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
Database:WorldCat
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Genre/Form: Conference papers and proceedings
Congresses
Material Type: Conference publication
Document Type: Book
All Authors / Contributors: Seiichi Miyazaki; Hitoshi Tabata
ISBN: 9783037850510 3037850515
OCLC Number: 743245422
Description: xi, 234 p. : ill. ; 25 cm.
Contents: High Mobility Ge-Based CMOS Device Technologies --
SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator --
Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices --
Functional Device Applications of Nanosilicon --
Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs --
KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel --
Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures --
Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact --
Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure --
Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions --
First-Principles Calculations of the Dielectric Constant for the GeO2 Films --
Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory --
Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors --
Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator --
Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering --
Resistive Memory Utilizing Ferritin Protein with Nano Particle --
Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation --
Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction --
Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface --
Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process --
Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation --
Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction --
Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures --
Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application --
Strained Ge and Ge1-xSnx Technology for Future CMOS Devices --
Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) --
Structural Change during the Formation of Directly Bonded Silicon Substrates --
Microscopic Structure of Directly Bonded Silicon Substrates --
Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains --
Si Nanodot Device Fabricated by Thermal Oxidation and their Applications --
Influences of Carrier Transport on Drain-Current Variability of MOSFETs --
Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers --
Analysis of Threshold Voltage Variations in Fin Field Effect Transistors --
Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs --
Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction --
Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs --
Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors --
Interconnect Design Challenges in Nano CMOS Circuit.
Series Title: Key engineering materials, v. 470.
Other Titles: Proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics
International Symposium on Technology Evolution for Silicon Nano-Electronics
Responsibility: edited by Seiichi Miyazaki and Hitoshi Tabata.

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