skip to content
Tungsten and other refractory metals for VLSI applications II : proceedings of the 1986 workshop held November 12-14, 1986, Palo Alto, California, U.S.A. Preview this item
ClosePreview this item

Tungsten and other refractory metals for VLSI applications II : proceedings of the 1986 workshop held November 12-14, 1986, Palo Alto, California, U.S.A.

Author: Eliot K Broadbent; R S Blewer; University of California, Berkeley. Continuing Education in Engineering.
Publisher: Pittsburgh, Pa. : Materials Research Society, ©1987.
Series: Materials Research Society conference proceedings.
Edition/Format:   Book : Conference publication : EnglishView all editions and formats

(not yet rated) 0 with reviews - Be the first.

More like this


Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...


Genre/Form: Conference proceedings
Material Type: Conference publication
Document Type: Book
All Authors / Contributors: Eliot K Broadbent; R S Blewer; University of California, Berkeley. Continuing Education in Engineering.
ISBN: 0931837669 9780931837661
OCLC Number: 16278166
Notes: "Papers presented at the Third Workshop on Tungsten and Other Refractory Metals for VLSI Applications."--Preface.
Description: xvii, 426 pages : illustrations ; 24 cm.
Contents: Tungsten : a spectator's view / D.B. Fraser --
Device considerations for using tungsten and other refractory metals in CMOS VLSI / J.Y. Chen --
Thin-film diffusion barriers for metal-semiconductor contacts / M.-A. Nicolet --
The physics and chemistry of thin "native" oxide films on silicon / B.E. Deal and D.-B. Kao --
Observations on selectivity loss during tungsten CVD / J.R. Creighton --
A model for tungsten nucleation on oxide / C.M. McConica --
Evaluation on selective deposition of CVD W films by measurement of surface temperature / T. Ohba [and others] --
Temperature programmed desorptions of tungsten CVD materials / M.A. Heiny and C.M. McConica --
The reaction kinetics of the H₂ reduction of WF₆ in the chemical vapor deposition of tungsten films / P. van der Putte --
The microstructure of CVD W films produced by the Si reduction of WF₆ / M.L. Green [and others] --
Interaction of CVD tungsten with underlying metal layers / S.L. Ng [and others] --
Growth of selective tungsten on self-aligned CoSi₂ by low pressure chemical vapor deposition / P. van der Putte [and others] --
Selective CVD of TaSi₂ / T.P.H.F. Wendling, C. Wieczorek, and K. Hieber --
Flow configuration effects on the deposition properties of selective tungsten / Y. Kusumoto [and others] --
Selective and blanket tungsten by APCVD / N. Gralenski and L. Bartholomew --
Selective tungsten deposition in a batch cold wall CVD system / R. Chow [and others] --
Selective tungsten deposition in a Varian/Torrex 5101 cold wall CVD reactor / R.F. Foster, D.L. Brors, and S. Tseng --
Highly reliable tungsten gate technology / N. Kobayashi [and others] --
A refractory metal gate approach for micronic CMOS technology / v. Lubowiecki [and others] --
Adhesion of blanket tungsten to oxides / K.C. Ray Chiu and N.E. Zetterquist --
Thin layers of tiN and Al as glue layers for blanket tungsten deposition / V.V.S. Rana [and others] --
Low pressure chemical vapor deposition of molybdenum : kinetics and reaction mechanisms / t. Sahin, E.J. Flanigan, and J.T. Sears --
CVD molybdenum from MoF₆ / Microstructural characterization of molybdenum films deposited by LPCVD / N. Lifshitz, J.M. Brown, and D.S. Williams --
The influence of selective tungsten deposition on shallow n(As or P)/p and p⁺(BF₂)/n junction leakage / G.E. Georgiou [and others] --
Detrimental effects of residual silicon oxides on LPCVD tungsten depositions in shallow junction devices / R.S. Blewer and M.E. Tracy --
Electromigration-induced short circuit failure in aluminum/tungsten (CVD) conductors / E.K. Broadbent and J.M. Towner --
Selective CVD tungsten for bipolar multilevel interconnection / N. Tsuzuki [and others] --
Thermal stability of Al/W/p-n Si contacts during postmetallization annealing / L. Gutai, M. Delfino, and J.M. DeBlasi --
The characterization of titaniu-nitride thin film as diffusion barrier for VLSI metallization / K.-H. Park [and others] --
The deposition, contact and electromigration properties of reactively sputtered titanium nitride films / R.C. Ellwanger and J.M. Towner --
Formation kinetics and properties of titanium nitride formed by rapid thermal annealing / R.K. Shukla and S.A. Yoshikawa --
Thermal stability and nitrogen redistribution in the Ti/W-N bilayer / F.C.T. So [and others] --
Properties of reactively sputtered WN[subscript x] films / E. Kolawa [and others] --
TiW as a barrier metal for small contacts / S. Saito [and others] --
The stability of the electrical and structural properties of electron beam deposited and sputter deposited Ta and Mo Schottky contacts to GaAs / A.K. Kulkarni, M.G. Thompson, and G.H. Whipple --
Practical preparation of sputtered refractory metal diffusion barriers / R.S. Nowicki --
Development of refractory metals and silicides targets, and their characteristics / M. Suzuki --
Reactive ion etching of refractory metals for gate and interconnect applications / R.J. Saia and B. Gorowitz --
Plasma etching of CVD tungsten films for VLSI applications / C.-H. Chen, L.C. Watson, and D.W. Schlosser --
Reactive ion etching of submicrometer size features in tungsten thin films / T.J. Whetten, N.Y. Whetten, and E.D. Wolf --
Reactive ion etching of an Al-Si/TiW multilayer / N. Takenaka [and others] --
The HF partial pressure as a selectivity determinant during the selective deposition of tungsten / L.F. Tz. Kwakman [and others] --
The contact properties to TiSi₂ and the adhesion within sub-micron contact holes of etched back CVD W/adhesion layer films / R.C. Ellwanger [and others] --
Mechanisms for whisker growth in thin films / J.E. Sanchez, Jr. --
Tungsten deposition in porous silicon for the formation of buried layer conductors / R.S. Blewer, S.S. Tsao, and M. Tracy --
Reliability of devices with tungsten elements / S. Mehta --
Device reliability when using tungsten interconnects / J.P. Roland_
Series Title: Materials Research Society conference proceedings.
Responsibility: sponsored by Continuing Education in Engineering, University Extension, University of California, Berkeley ; editor, Eliot K. Broadbent ; associate editors, Robert S. Blewer [and others].


User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...


Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data

schema:name"Integrated circuits--Very large scale integration--Materials"@en
schema:name"Integrated circuits--Very large scale integration--Materials."@en
schema:name"Integrated circuits--Very large scale integration--Materials"@en
schema:name"Heat resistant alloys"@en
schema:name"Heat resistant alloys."@en
schema:name"University of California, Berkeley. Continuing Education in Engineering."
schema:genre"Conference proceedings."@en
schema:genre"Conference proceedings"@en
schema:name"Tungsten and other refractory metals for VLSI applications II : proceedings of the 1986 workshop held November 12-14, 1986, Palo Alto, California, U.S.A."@en

Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.