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Tungsten and other refractory metals for VLSI applications II : proceedings of the 1986 workshop held November 12-14, 1986, Palo Alto, California, U.S.A.

Author: Eliot K Broadbent; R S Blewer; University of California, Berkeley. Continuing Education in Engineering.
Publisher: Pittsburgh, Pa. : Materials Research Society, ©1987.
Series: Materials Research Society conference proceedings.
Edition/Format:   Book : Conference publication : EnglishView all editions and formats
Database:WorldCat
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Genre/Form: Conference proceedings
Congresses
Material Type: Conference publication
Document Type: Book
All Authors / Contributors: Eliot K Broadbent; R S Blewer; University of California, Berkeley. Continuing Education in Engineering.
ISBN: 0931837669 9780931837661
OCLC Number: 16278166
Notes: "Papers presented at the Third Workshop on Tungsten and Other Refractory Metals for VLSI Applications."--Preface.
Description: xvii, 426 pages : illustrations ; 24 cm.
Contents: Tungsten : a spectator's view / D.B. Fraser --
Device considerations for using tungsten and other refractory metals in CMOS VLSI / J.Y. Chen --
Thin-film diffusion barriers for metal-semiconductor contacts / M.-A. Nicolet --
The physics and chemistry of thin "native" oxide films on silicon / B.E. Deal and D.-B. Kao --
Observations on selectivity loss during tungsten CVD / J.R. Creighton --
A model for tungsten nucleation on oxide / C.M. McConica --
Evaluation on selective deposition of CVD W films by measurement of surface temperature / T. Ohba [and others] --
Temperature programmed desorptions of tungsten CVD materials / M.A. Heiny and C.M. McConica --
The reaction kinetics of the H₂ reduction of WF₆ in the chemical vapor deposition of tungsten films / P. van der Putte --
The microstructure of CVD W films produced by the Si reduction of WF₆ / M.L. Green [and others] --
Interaction of CVD tungsten with underlying metal layers / S.L. Ng [and others] --
Growth of selective tungsten on self-aligned CoSi₂ by low pressure chemical vapor deposition / P. van der Putte [and others] --
Selective CVD of TaSi₂ / T.P.H.F. Wendling, C. Wieczorek, and K. Hieber --
Flow configuration effects on the deposition properties of selective tungsten / Y. Kusumoto [and others] --
Selective and blanket tungsten by APCVD / N. Gralenski and L. Bartholomew --
Selective tungsten deposition in a batch cold wall CVD system / R. Chow [and others] --
Selective tungsten deposition in a Varian/Torrex 5101 cold wall CVD reactor / R.F. Foster, D.L. Brors, and S. Tseng --
Highly reliable tungsten gate technology / N. Kobayashi [and others] --
A refractory metal gate approach for micronic CMOS technology / v. Lubowiecki [and others] --
Adhesion of blanket tungsten to oxides / K.C. Ray Chiu and N.E. Zetterquist --
Thin layers of tiN and Al as glue layers for blanket tungsten deposition / V.V.S. Rana [and others] --
Low pressure chemical vapor deposition of molybdenum : kinetics and reaction mechanisms / t. Sahin, E.J. Flanigan, and J.T. Sears --
CVD molybdenum from MoF₆ / Microstructural characterization of molybdenum films deposited by LPCVD / N. Lifshitz, J.M. Brown, and D.S. Williams --
The influence of selective tungsten deposition on shallow n(As or P)/p and p⁺(BF₂)/n junction leakage / G.E. Georgiou [and others] --
Detrimental effects of residual silicon oxides on LPCVD tungsten depositions in shallow junction devices / R.S. Blewer and M.E. Tracy --
Electromigration-induced short circuit failure in aluminum/tungsten (CVD) conductors / E.K. Broadbent and J.M. Towner --
Selective CVD tungsten for bipolar multilevel interconnection / N. Tsuzuki [and others] --
Thermal stability of Al/W/p-n Si contacts during postmetallization annealing / L. Gutai, M. Delfino, and J.M. DeBlasi --
The characterization of titaniu-nitride thin film as diffusion barrier for VLSI metallization / K.-H. Park [and others] --
The deposition, contact and electromigration properties of reactively sputtered titanium nitride films / R.C. Ellwanger and J.M. Towner --
Formation kinetics and properties of titanium nitride formed by rapid thermal annealing / R.K. Shukla and S.A. Yoshikawa --
Thermal stability and nitrogen redistribution in the Ti/W-N bilayer / F.C.T. So [and others] --
Properties of reactively sputtered WN[subscript x] films / E. Kolawa [and others] --
TiW as a barrier metal for small contacts / S. Saito [and others] --
The stability of the electrical and structural properties of electron beam deposited and sputter deposited Ta and Mo Schottky contacts to GaAs / A.K. Kulkarni, M.G. Thompson, and G.H. Whipple --
Practical preparation of sputtered refractory metal diffusion barriers / R.S. Nowicki --
Development of refractory metals and silicides targets, and their characteristics / M. Suzuki --
Reactive ion etching of refractory metals for gate and interconnect applications / R.J. Saia and B. Gorowitz --
Plasma etching of CVD tungsten films for VLSI applications / C.-H. Chen, L.C. Watson, and D.W. Schlosser --
Reactive ion etching of submicrometer size features in tungsten thin films / T.J. Whetten, N.Y. Whetten, and E.D. Wolf --
Reactive ion etching of an Al-Si/TiW multilayer / N. Takenaka [and others] --
The HF partial pressure as a selectivity determinant during the selective deposition of tungsten / L.F. Tz. Kwakman [and others] --
The contact properties to TiSi₂ and the adhesion within sub-micron contact holes of etched back CVD W/adhesion layer films / R.C. Ellwanger [and others] --
Mechanisms for whisker growth in thin films / J.E. Sanchez, Jr. --
Tungsten deposition in porous silicon for the formation of buried layer conductors / R.S. Blewer, S.S. Tsao, and M. Tracy --
Reliability of devices with tungsten elements / S. Mehta --
Device reliability when using tungsten interconnects / J.P. Roland_
Series Title: Materials Research Society conference proceedings.
Responsibility: sponsored by Continuing Education in Engineering, University Extension, University of California, Berkeley ; editor, Eliot K. Broadbent ; associate editors, Robert S. Blewer [and others].

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