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ULSI devices

Author: C -Y Chang; S M Sze
Publisher: New York : Wiley, ©2000.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:
"Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics with  Read more...
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Details

Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: C -Y Chang; S M Sze
ISBN: 0471240672 9780471240679
OCLC Number: 41315491
Notes: "A Wiley-Interscience publication."
Description: xii, 729 pages : illustrations ; 25 cm
Contents: Bipolar transistor fundamentals / E. Kasper --
MOSFET fundamentals / P. Wong --
Device miniaturization and simulation / S. Banerjee and B. Streetman --
SOI and three-dimensional structures / J.P. Colinge --
The hot-carrier effect / B. Doyle --
DRAM and SRAM / S. Shichijo --
Nonvolatile memory / J. Caywood and G. Derbenwich --
CMOS digital and analog building block circuits for mixed-signal applications / D. Pehlke and M.-C.F. Chang --
High-speed or low-voltage, low-power operations / I.C. Chen and W. Liu --
System-on-chip concepts / M. Pelgrom.
Responsibility: edited by C.Y. Chang, S.M. Sze.
More information:

Abstract:

"Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices a MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications."--Jacket.

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