WorldCat Identities

Selberherr, Siegfried 1955-

Overview
Works: 40 works in 126 publications in 2 languages and 1,519 library holdings
Genres: Conference papers and proceedings  Classification  Maps 
Roles: Author, Editor, Contributor, Other, Creator
Publication Timeline
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Most widely held works by Siegfried Selberherr
Analysis and simulation of semiconductor devices by Siegfried Selberherr( Book )

13 editions published between 1984 and 2013 in English and held by 447 WorldCat member libraries worldwide

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices
Simulation of semiconductor processes and devices, 2007 : SISPAD 2007 by Tibor Grasser( )

20 editions published in 2007 in English and Undetermined and held by 418 WorldCat member libraries worldwide

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Programmieren in C by Robert Klima( )

10 editions published between 2003 and 2010 in German and English and held by 256 WorldCat member libraries worldwide

Technology CAD systems by F Fasching( Book )

5 editions published in 1993 in English and held by 123 WorldCat member libraries worldwide

The proceedings of the first "Workshop on Technology CAD Systems" is an authoritative tutorial on CAD software systems for the physical design of semiconductor devices and manufacturing processes. Fourteen invited papers by academic and industrial representatives from USA, Europe, and Japan, as well as from commercial software vendors provide an excellent overview of the work in this area. This book covers the following topics: Coupling and integration of process simulation, device simulation, parameter extraction, and circuit simulation, technology CAD requirements, architectures and strategies of existing CAD systems, implementation and software aspects, practical applications and experiences with technology CAD, and directions of future work in this field
Simulation of semiconductor devices and processes, vol. 5 by Siegfried Selberherr( Book )

5 editions published in 1993 in English and Undetermined and held by 112 WorldCat member libraries worldwide

The SISDEP 93 conference proceedings present outstanding research and development results in the area of numerical process and device simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconductor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understanding of physical effects, these proceedings support the simulation community and the process- and device engineers who need reliable numerical simulation tools for characterization, prediction, and development. This book covers the following topics: process simulation and equipment modeling, device modeling and simulation of complex structures, device simulation and parameter extraction for circuit models, integration of process, device and circuit simulation, practical applications of simulation, algorithms and software
Dialektometrische Studien by Hans Goebl( Book )

8 editions published between 1984 and 2018 in German and held by 40 WorldCat member libraries worldwide

Dialektometrische Studien : anhand italoromanischer, rätoromanischer und galloromanischer Sprachmaterialien aus AIS und ALF by Hans Goebl( Book )

9 editions published in 1984 in German and held by 31 WorldCat member libraries worldwide

Dialektometrie : Prinzipien und Methoden des Einsatzes der Numerischen Taxonomie im Bereich der Dialektgeographie by Hans Goebl( Book )

3 editions published in 1982 in German and held by 21 WorldCat member libraries worldwide

Dialektometrische Studien by Hans Goebl( )

2 editions published between 1984 and 2018 in German and held by 7 WorldCat member libraries worldwide

[Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93) : held at the Technical University of Vienna, Austria, September 7-9, 1993] by 1993, Wien) International Conference on Simulation of Semiconductor Devices and Processes (5( Book )

1 edition published in 1993 in English and held by 7 WorldCat member libraries worldwide

Nano devices and sensors by International Symposium on Next-Generation Electronics( )

1 edition published in 2016 in English and held by 6 WorldCat member libraries worldwide

This volume on semiconductor devices focuses on such topics as nano-imprinting, lithography, nanowire charge-trapping, thermo-stability in nanowires, nano-electrodes, and voltage and materials used for fabricating and improving electrical characteristics of nano-materials
HANS GOEBL : dialektometrische studien by Hans Goebl( )

2 editions published in 2018 in German and held by 6 WorldCat member libraries worldwide

The book series Beihefte zur Zeitschrift für romanische Philologie is among the most renowned publications in Romance Studies. It covers the entire field of Romance linguistics, including the national languages as well as the lesser studied Romance languages. The series publishes high-quality monographs and collected volumes on all areas of linguistic research, on medieval literature and on textual criticism
Simulation of semiconductor devices and processes by Siegfried Selberherr( Book )

6 editions published in 1993 in English and Undetermined and held by 6 WorldCat member libraries worldwide

Monte Carlo methods and applications : Proceedings of the 8th IMACS Seminar on Monte Carlo Methods, August 29 September 2, 2011, Borovets, Bulgaria by K. K Sabelʹfelʹd( )

3 editions published between 2012 and 2013 in English and held by 5 WorldCat member libraries worldwide

Biographical note: Karl K. Sabelfeld, Institute of Computational Mathematics and Geophysics, Russian Acacemy of Sciences, Novosibirsk, Russia; Ivan Dimov, Institute of Information and Communication Technologies, Bulgarian Academy of Sciences, Sofia, Bulgaria
IMPLICATIONS OF ANALYTICAL INVESTIGATIONS ABOUT THE SEMICONDUCTOR EQUATIONS ON DEVICE MODELING PROGRAMS by C. A Ringhofer( Book )

4 editions published in 1983 in English and Undetermined and held by 4 WorldCat member libraries worldwide

This paper gives guidelines for the development of computer programs for the numerical simulation of semiconductor devices. For this purpose the basic mathematical results on the corresponding elliptic boundary value problem are reviewed. In particular, existence, smoothness and structure of the solutions of the fundamental semiconductor equations are discussed. Various feasible approaches to the numerical solution of the semiconductor equations are described. Much emphasis is placed on constructive remarks to help authors of device simulation programs to make decisions on their code design problems. In particular, criteria for an optimal mesh generation strategy are given. The iterative solution of the systems of nonlinear and linear equations obtained by discretising the semiconductor equations is discussed. An example is given showing the power of these concepts combined with modern numerical methods in comparison to classical approaches. (Author)
A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations by Peter A Markowich( Book )

4 editions published in 1983 in English and Undetermined and held by 4 WorldCat member libraries worldwide

This paper is concerned with a singular perturbation analysis of the two-dimensional steady state semiconductor equations and of the usual finite difference scheme consisting of the five point discretization of Poisson's equation and of the Scharfetter-Gummel discretization of the continuity equations. By appropriate scaling the authors transform the semiconductor equations into a singularly perturbed elliptic system with nonsmooth data. The singular perturbation parameter is defined as the minimal Debeye-length of the device under consideration. Singular perturbation theory allows to distinguish between the regions of strong and of weak variation of solutions, so called layers and smooth regions, and to describe solutions qualitatively in these regions. This information is used to analyze the stability and convergence of the discretization scheme. Particular emphasis is put on the construction of efficient grids. It is shown that the Scharfetter-Gummel method is uniformly convergent, i.e. the global error contribution coming form the continuity equations is small when the maximal mesh size is small, independent of the gradient of the solution. Layer jumps are automatically resolved. The five point scheme however is not uniformly convergent. Therefore, the authors present a modification of the five point scheme which is uniformly convergent
Zweidimensionale Modellierung von MOS-Transistoren by Siegfried Selberherr( )

4 editions published in 1981 in German and held by 3 WorldCat member libraries worldwide

A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device by Peter A Markowich( Book )

3 editions published in 1982 in English and held by 3 WorldCat member libraries worldwide

This paper is concerned with the static, one-dimensional modelling of a semiconductor device (namely the pn-junction) when a bias is appled. The governing equations are the well known equations describing carrier transport in a semiconductor which consist of a system of five ordinary differential equations subject to boundary conditions imposed at the contacts. Because of the different orders of magnitude of the solution components at the boundaries, we scale the components individually and obtain a singular perturbation problem. We analyse the equilibrium case (zero bias applied) and set up approximate models, posed as singularly perturbed second order equations, by neglecting the hole and electron current densities. This makes sense for small forward bias and for reverse bias. For the full problems we prove an a priori estimate on the number of electron-hole carrier pairs and derive asymptotic expansions (as the perturbation parameter tends to zero) by setting up the reduced system and the boundary layer system. We prove existence theorems for both systems and use the asymptotic expansion to solve the model equations numerically and analyse the dependence of the solutions on the applied bias. (Author)
Computational microelectronics( )

in English and held by 2 WorldCat member libraries worldwide

Modelling the negative bias temperature instability( )

1 edition published in 2007 in English and held by 1 WorldCat member library worldwide

 
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Simulation of semiconductor processes and devices, 2007 : SISPAD 2007
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Programmieren in C
Alternative Names
Selberherr S.

Selberherr, S. 1955-

Siegfried Selberherr Austrian University Professor and scientist

Siegfried Selberherr scienziato austriaco

Siegfried Selberherr Universitätsprofessor und Wissenschaftler

Siegfried Selberherr wetenschapper uit Oostenrijk

Zigfrid Zelberher

Σίγκφριντ Σέλμπερχερ Αυστιρακός πανεπιστημιακός και επσιτήμονας

Зигфрид Зелберхер

Зигфрид Зельберхерр

Зігфрід Зельбергерр

زیگفرید زلبرهر دانشمند و مهندس اتریشی

Languages
English (64)

German (37)