WorldCat Identities

Baliga, B. Jayant 1948-

Overview
Works: 46 works in 249 publications in 2 languages and 7,114 library holdings
Genres: Conference papers and proceedings 
Roles: Author, Editor, Other
Publication Timeline
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Most widely held works about B. Jayant Baliga
 
Most widely held works by B. Jayant Baliga
Silicon RF power MOSFETS by B. Jayant Baliga( )

16 editions published in 2005 in English and held by 1,704 WorldCat member libraries worldwide

The world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video. The deployment ofdigital networks has required migration to multi-carrier RF poweramplifiers with stringent demands on linearity and efficiency. Thisbook describes the physics, design considerations and RF performanceof silicon power Metal-Oxide- Semiconductor Field Effect Transisto
Silicon carbide power devices by B. Jayant Baliga( )

20 editions published between 2005 and 2016 in English and Undetermined and held by 1,684 WorldCat member libraries worldwide

Ch. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis
Fundamentals of power semiconductor devices by B. Jayant Baliga( )

25 editions published between 2008 and 2019 in English and Chinese and held by 511 WorldCat member libraries worldwide

"Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices." "Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses: numerical simulation examples to elucidate the operating physics and validate the models; device performance attributes that allow practicing engineers in the industry to develop products; and treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field." "Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures."--Jacket
Advanced power MOSFET concepts by B. Jayant Baliga( )

16 editions published between 2010 and 2014 in English and held by 474 WorldCat member libraries worldwide

Advanced Power MOSFET Concepts provides an in-depth treatment of the physics of operation of innovative power MOSFET device structures. Devices capable of operating over a broad range of voltages from 30-V to 1000-V are included. Power MOSFET structures configured to reduce the gate charge while maintaining a low specific on-resistance are emphasized. Power MOSFET structures that are based on the charge coupling principal that allow reduction of the specific on-resistance by an order of magnitude are described. Analytical models for explaining the operation of all the advanced power MOSFET structures are developed. The results of numerical simulations are provided to give additional insight into the device physics and validate the analytical models. This volume
Advanced power rectifier concepts by B. Jayant Baliga( )

15 editions published in 2009 in English and Undetermined and held by 435 WorldCat member libraries worldwide

Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices are developed. Results of numerical simulations are provided for additional insight into device physics and for validation of various analytical models. Drawing upon years of practical experience and using numerous examples and illustrative designs, B. Jayant Baliga discusses: Analytical formulations for design and analysis of structures such as the Junction Barrier controlled Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier Numerical simulations to explain the operating physics and validate the models The role of silicon carbide in the structural design and development of power rectifiers Advanced Power Rectifier Concepts will be of interest to practicing engineers in the power semiconductor community and can also serve as a reference for graduate students and faculty doing research in an academic environment. Selected sections of the book can be used as supplementary teaching material for courses taught using the textbook 'Fundamentals of Power Semiconductor Devices' by the author
Advanced high voltage power device concepts by B. Jayant Baliga( )

11 editions published between 2011 and 2014 in English and held by 381 WorldCat member libraries worldwide

Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures. This book provides readers with: The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;  Analytical formulations for all the device structures with validation performed using numerical simulations; Analysis of potential silicon carbide structures that could compete with the silicon devices. Advanced High Voltage Power Device Concepts is an ideal book for researchers, engineers, and educators interested in emerging technology for renewable energy generation and distribution. This book provides readers with: The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;  Analytical formulations for all the device structures with validation performed using numerical simulations; Analysis of potential silicon carbide structures that could compete with the silicon devices. Advanced High Voltage Power Device Concepts is an ideal book for researchers, engineers, and educators interested in emerging technology for renewable energy generation and distribution
Modern power devices by B. Jayant Baliga( Book )

16 editions published between 1986 and 1992 in English and Undetermined and held by 314 WorldCat member libraries worldwide

Epitaxial silicon technology by B. Jayant Baliga( Book )

10 editions published between 1986 and 2014 in English and Undetermined and held by 281 WorldCat member libraries worldwide

Silicon vapor phase epitaxy / H.M. Liaw and J.W. Rose -- Silicon molecular beam epitaxy / Subramanian S. Iyer -- Silicon liquid phase epitaxy / B. Jayant Baliga -- Silicon on sapphire heteroepitaxy / Prahalad K. Vasudev -- Silicon-on-insulator epitaxy / Hon Wai Lam
The IGBT device : physics, design and applications of the insulated gate bipolar transistor by B. Jayant Baliga( )

9 editions published in 2015 in English and held by 260 WorldCat member libraries worldwide

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists
Power transistors : device design and applications by B. Jayant Baliga( Book )

11 editions published between 1984 and 1985 in English and held by 228 WorldCat member libraries worldwide

High voltage integrated circuits by B. Jayant Baliga( Book )

9 editions published in 1988 in English and held by 169 WorldCat member libraries worldwide

Cryogenic operation of silicon power devices by Ranbir Singh( Book )

7 editions published in 1998 in English and held by 157 WorldCat member libraries worldwide

This is the first comprehensive resource of power device electrical characteristics in a cryogenic environment. Using theoretical and experimental knowledge from the literature, temperature dependence of fundamental silicon material parameters like intrinsic carrier concentration, carrier mobilities, lifetimes and bandgap narrowing was identified. The temperature dependent model of avalanche breakdown was developed using experimental data on numerous devices. A wide range of power devices, each with its own unique features, was chosen for theoretical and experimental analysis. Using these analyses, Schottky diodes, power MOSFETs, power BJTs, and power JFETs were optimized in the 300-77K temperature range. Cryogenic Operation of Silicon Power Devices presents the different characteristics of power devices operated below -55°C (220K). It provides data and physics based models for power devices operated at temperatures down to 77K for the first time within a single source. All commercially available devices have been included to provide comprehensive coverage. Also, a fundamental analysis of devices identifies the suitability of various devices to applications requiring cryogenic operations. A quantitative analysis of the relative strengths and weaknesses of these devices is also presented
Power semiconductor devices by B. Jayant Baliga( Book )

11 editions published between 1995 and 1999 in English and held by 139 WorldCat member libraries worldwide

ISPSD '91 : proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, Stouffer Harborplace Hotel, Baltimore, Maryland, USA, April 22-24 by International Symposium on Power Semiconductor Devices & ICs( Book )

4 editions published in 1991 in English and held by 86 WorldCat member libraries worldwide

Wide bandgap semiconductor power devices : materials, physics, design and applications by B. Jayant Baliga( )

4 editions published between 2018 and 2019 in English and held by 82 WorldCat member libraries worldwide

ISPSD '93 : proceedings of the 5th International Symposium on Power Semiconductor Devices & ICs, May 18-20, 1993, Monterey, California, USA by International Symposium on Power Semiconductor Devices & ICs( Book )

6 editions published in 1993 in English and held by 77 WorldCat member libraries worldwide

Gallium nitride and silicon carbide power devices by B. Jayant Baliga( Book )

5 editions published between 2016 and 2017 in English and held by 42 WorldCat member libraries worldwide

Fundamentals of Power Semiconductor Devices by B. Jayant Baliga( )

3 editions published between 2008 and 2019 in English and held by 20 WorldCat member libraries worldwide

Defects and Impurities in 4H- and 6H-SiC Homoepitaxial Layers: Identification, Origin, Effect on Properties of Ohmic Contacts and Insulating Layers and Reduction( )

11 editions published between 1995 and 1998 in English and held by 11 WorldCat member libraries worldwide

Chemical vapor deposition systems are being fabricated to deposit 4H- and 6H-SiC thin films at moderate and very high temperatures. Single crystalline A1N films with smooth surfaces were grown using gas-source MBE and characterized with RHEED, XRD, TEM and SIMS. The C-V characteristics of All A1N/SiC heterostructures depended strongly on temperature from 200 to 573 K and exhibited hysteresis effects consistent with the presence of slow interface traps. The A1N/SiC interface had a density of trapped negative charge of 3x10(exp 11)/sq cm at 27 deg C; it decreased with increasing temperature. A three-step process involving surface preparation, initial insulator formation, and oxide deposition was developed for investigation of oxide growth on 6H- and 4H-SiC. Films of SiO2 have been deposited at approx. 10 A/min for characterization. Measured impact ionization coefficient data indicate that the reverse breakdown voltage of 6H- and 4H-SiC devices should increase with temperature. This data shows that Baliga's figure of merit increases by approx. 1.5 and approx. 1.8 for 6H- and 4H-SiC, respectively, indicating superior specific on resistance for SiC field effect transistors relative to that projected earlier. Electron inversion layer mobilities of 110 sq cm/Vs (the highest reported to date) and 160 sq cm/Vs (the first reported value) have been measured in 6H- and 4H-SiC lateral MOSFETs. The devices were fabricated using a non-selfaligned process. A low temperature deposited oxide (LTO) subjected to different oxidizing and inert anneals was used as the gate dielectric
Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs by International Symposium on Power Semiconductor Devices and ICs( Book )

3 editions published in 1991 in English and held by 10 WorldCat member libraries worldwide

 
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Silicon RF power MOSFETS
Covers
Silicon carbide power devicesFundamentals of power semiconductor devicesAdvanced power MOSFET conceptsAdvanced power rectifier conceptsAdvanced high voltage power device conceptsCryogenic operation of silicon power devicesPower semiconductor devices
Alternative Names
B. Jayant Baliga Indiaas elektra-ingenieur

B. Jayant Baliga Indian-American electrical engineer

B·賈揚特·巴利加

Baliga, B. J. 1948-

Baliga, B. Jayant

Baliga, B. Jayant 1948-

Baliga, Bantval Jayant 1948-

Baliga, Jayant 1948-

Bantval Jayant Baliga

Jayant Baliga

Jayant Baliga, B. 1948-

Jayant Baliga, Bantval 1948-

Балига, Джайянт

بی جایانت بالیگا

جايانت باليجا

বি. জয়ন্ত বালিগা

Languages
English (208)

Chinese (1)