WorldCat Identities

Holonyak, Nick 1928-

Works: 41 works in 75 publications in 2 languages and 401 library holdings
Genres: Academic theses  Conference papers and proceedings  History 
Roles: Author, Other, Editor
Classifications: QC611, 621.38152
Publication Timeline
Most widely held works by Nick Holonyak
Physical properties of semiconductors by Charles M Wolfe( Book )

10 editions published in 1989 in English and held by 333 WorldCat member libraries worldwide

Junction effects in compound semiconductors( Book )

9 editions published between 1964 and 1969 in English and held by 9 WorldCat member libraries worldwide

The effect of the considerable depth of donor impurity states near the indirect <100> conduction band minima on the direct-indirect transition in Ga(AsP) is discussed. A simple technique for using a Ga(AsP) laser to operate a CdSe laser is described. The current understanding of the p-'i'-n deep-level oscillator is mentioned. (Author)
A collection of Professor John Bardeen's publications on semiconductors and superconductivity by John Bardeen( Book )

1 edition published in 1988 in English and held by 5 WorldCat member libraries worldwide

Effect of surface conditions on characteristics of rectifier junctions by Nick Holonyak( Book )

4 editions published in 1954 in English and held by 4 WorldCat member libraries worldwide

Lillian Hoddeson papers by Lillian Hoddeson( )

in English and held by 3 WorldCat member libraries worldwide

The professional papers of Lillian Hoddeson that include transcripts of oral history interviews she conducted with A.A. Abrikosov, David Allender, Ansel Anderson, Herbert Lawrence Anderson, Philip W. Anderson, William Anspacher, Bill Baker, Bill Bardeen, Jane Bardeen, Ravin Bhatt, H.W. Bode, Ralph Bown, Robert Brattain, Dan Cudzik, Lloyd Espenschied, Jim Gibbons, Norman D. Haney, Nick Holonyak, Gordon Moore, Jack A. Morton, Harry Nyquist, Jack Scaff, Bob Schrieffer, Glenn Seaborg, Frederick Seitz, Harry Sello, Mark Shepher, Emmy Shockley, William Shockley, Ralph Simmons, Charles Slichter, Myron Solomon, Morgan and Betty Sparks, John Tucker, Bill Wallenmeyer, Bill Werstler, and Fred Zawadowski. Some of the interviews were conducted by Irving Elichirigoity, Alison Kerr, Vicki Daitch, Michael Riordan, Tanya Irving, Lincoln Barnett, William Hammack, Julian Tebo, Lewis Gunn, Kris Fowler, Joe Tillman, and Steve Weiss. Included are working files of published articles, research material and correspondence used to write her books on the history of solid state physics, Fermi National Accelerator Laboratory, transistors, Bell Telephone Laboratory, and John Bardeen as well as her numerous articles that include the American Institute of Physics, Hans Bethe, Felix Bloch, Niels Bohr, Richard Bozorth, Walter Brattain, Ernst Braun, Laurie Brown, Oliver Buckley, Vannevar Bush, Karl Darrow, Peter Debye, P.A.M. Dirac, Michael Eckert, Richard Feynman, Paul Forman, Samuel Goudsmit, William Conyers Herring, Paul Hoch, Alan Holden, Frank Jewett, Mervin Kelly, Martin Klein, James Koehler, Thomas Kuhn, Lev Landau, Karl Lark-Horovitz, Los Alamos National Laboratory, Robert Maurer, Emanuel Maxwell, William McMillan, Nevill Francis Mott, National Academy of Science, Russell Ohl, Wolfgang Pauli, Rudolf Peierls, David Pines, A.B. Pippard, radar, Michael Riordan, Jack Scaff, Frederick Seitz, semiconductors, William Shockley, John Clarke Slater, Roman Smoluchowski, Arnold Sommerfeld, E.H. Sondheimer, Jurgen Teichmann, Texas Instruments, Spencer Weart, Vicktor Weisskopf, Western Electric, Addison White, and Eugene Wigner; and audio cassette copies of some of her interviews with prominent physicists (including many of the transcripts listed above) and lectures she attended
Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers by F. A Kish( )

1 edition published in 1992 in English and held by 2 WorldCat member libraries worldwide

Native-Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectronic Devices: Al-Based III-V Native Oxides( Book )

2 editions published in 2000 in English and held by 2 WorldCat member libraries worldwide

The study and use of Al-based III-V native oxide in quantum well heterostructure (QWH) devices has been pioneered in this project, and since the time of its introduction (1990) has grown into an international activity. An almost all-oxide enclosed microcavity laser and LED have been realized In the latter stages of this project. By employing a tunnel junction contact as a mechanism to invert lateral (edgewise) electron current into injection hole current (and thus accomplish laterally offset carrier injection), we have demonstrated oxide-confined edge emitter and vertical cavity surface emitting lasers (VCSELs) driven entirely with lateral electron currents, and thus with reduced resistive losses in spite of the offset current source. This is potentially important for optoelectronic IC development. The use of the Al-based III-IV native oxide to thwart hydrolyzation and increase device reliability has been demonstrated
Novel engineered compound semiconductor heterostructures for advanced electronics applications by G. E Stillman( Book )

2 editions published in 1992 in English and held by 2 WorldCat member libraries worldwide

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-layered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of Al(x)Ga(l-x)As-GaAs quantum- well heterostructures and the native oxide stabilization of Al(x)Ga(1-x)As-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report
Coherent (visible) light emission from Ga(As 1-xP x) junctions by Nick Holonyak( Book )

1 edition published in 1962 in English and held by 2 WorldCat member libraries worldwide

Semiconductor controlled rectifiers: principles and applications of p-n-p-n devices by F. E Gentry( Book )

2 editions published in 1965 in Undetermined and English and held by 2 WorldCat member libraries worldwide

Diodos emisores de luz by M. George Craford( )

2 editions published in 2001 in Spanish and held by 2 WorldCat member libraries worldwide

Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents by Jonathan Joseph, Jr Wierer( )

1 edition published in 1999 in English and held by 1 WorldCat member library worldwide

Data are presented on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical characteristics and provide a means to create thin highly defined cavities in semiconductor light-emitting structures
Growth and characterization of InP( Book )

1 edition published in 1981 in English and held by 1 WorldCat member library worldwide

Integrated e'ectronic systems( Book )

1 edition published in 1970 in English and held by 1 WorldCat member library worldwide

Layer disordering and aluminum-gallium interchange in aluminum gallium arsenide-gallium arsenide quantum well heterostructures by Louis Joseph Guido( )

1 edition published in 1989 in English and held by 1 WorldCat member library worldwide

In the experiments described here, Al$sb{rm x}$Ga$sb{rm 1-x}$As-GaAs superlattice and quantum well heterostructure (QWH) crystals have been used as test vehicles to study Al-Ga interdiffusion. The data demonstrate that Al-Ga interchange is strongly influenced by the interdependence of the crystal surface-ambient interaction and the Fermi-level effect. We have investigated the crystal surface-ambient interaction by varying both the surface encapsulation condition (e.g., SiO$sb2$-cap, Si$sb3$N$sb4$-cap) and the anneal ambient (As-rich, Ga-rich). The Fermi-level effect has been examined for QWH crystals doped with either donor or acceptor impurities during crystal growth and annealed, and for crystals converted to n-type conductivity by high-temperature Si diffusion or by Si$sp+$ ion implantation and annealing. The data show that Al-Ga interchange is enhanced for n-type samples annealed under As-rich conditions, and for p-type samples annealed under Ga-rich conditions. These trends suggest that acceptor native defects (V$sb{rm III}$) and donor native defects (I$sb{rm III}$, V$sb{rm As}$) are responsible for Al-Ga interdiffusion in n-type and p-type samples, respectively. By varying the anneal As$sb4$ over-pressure we have demonstrated that the degree of Al-Ga interchange does not increase monotonically for n-type samples as expected for a simple Column III vacancy controlled process. In addition, we show that the activation energy for Al-Ga interdiffusion (E$sb{rm Al-Ga}$) is reduced by $sbsim$2 eV for n-type samples as compared to nominally undoped samples. These results indicate that E$sb{rm Al-Ga}$ can be used to label the various Al-Ga interdiffusion regimes and, thereby, provide for more accurate identification of the native defect species involved in the interchange process. Furthermore, by employing three single-well QWH crystals that differ only in the location of the QW relative to the crystal surface, we demonstrate that the Al-Ga interchange mechanism is depth-dependent because of the re-equilibration of native defect concentrations at the crystal free surface. Finally, we report on Si$sp+$ ion implantation experiments that demonstrate enhanced Si$sp+$-IILD for very low implant doses, hence minimizing the effects of implant damage
Prentice-Hall series in solid state physical electronics( )

in Undetermined and held by 1 WorldCat member library worldwide

The III-V alloy p-n diode laser and LED ultimate lamp : ... historical perspective on the III-V alloy diode laser ... by Nick Holonyak( )

1 edition published in 2013 in English and held by 1 WorldCat member library worldwide

Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs by Peter Weindel Evans( )

1 edition published in 1998 in English and held by 1 WorldCat member library worldwide

In this work the crystal growth, growth calibration, and device fabrication of AlGaAs semiconductor and native oxide materials for use in semiconductor laser diodes employing buried tunnel contacts and wafer bonding are described. The AlGaAs native oxide is used to guide both current and photons via apertures and highly reflective semiconductor/oxide mirrors and interfaces in both edge-emitting and vertical cavity surface-emitting laser diodes (VCSELs). Highly reflective mirrors define thin vertical cavities which increase coupling of gain to the lasing mode and reduce thresholds in both edge-emitting lasers and in VCSELs. Lateral electron currents feed reverse-biased tunnel contact junctions "underneath" the insulating oxide-defined mirrors in order to excite the laser active region (inject holes) while minimizing the amount of material needed for current spreading. In order to realize buried tunnel contact junction VCSELs, various crystal growth, material, and device optimization procedures are required and are described
Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to small-volume quantum well heterostructure lasers by Michael John Ries( )

2 editions published in 1996 in English and held by 1 WorldCat member library worldwide

In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate small-volume semiconductor light-emitting devices. The oxidized material, native to the crystal, is mechanically and chemically stable. In addition, it is electrically insulating and has a low refractive index making it useful for defining optical cavities and current paths. The oxidation rate is sensitive to the Al composition of the material, permitting selective oxidation of "buried" high-Al-composition layers. The selective oxidation of "buried" layers is used in this work to fabricate laser cavities that are small in volume. Small-volume cavities, called microcavities, are known to exert control over the recombination of carriers within the cavity, and may be exploited to create devices with improved laser characteristics. In this work, the embedded oxide is used to form the distributed Bragg reflecting (DBR) mirrors of a vertical-cavity surface-emitting laser (VCSEL), resulting in a very high index-contrast mirror and, consequently, a very compact VCSEL cavity that exhibits microcavity effects very strongly. Another form of microcavity, the microdisk laser, is fabricated using the oxide process. The microdisk laser (10 $mu$m in diameter) rests on the low-index, thermally conductive native oxide and exhibits laser modes characteristic of "whispering gallery" modes propagating around the perimeter of the disk. Low threshold pump intensities indicate that these microdisk lasers are high-Q cavities. By combining impurity-induced layer disordering (IILD) with the oxidation process, a planar minidisk laser is fabricated. The minidisk laser is larger in diameter (37 $mu$m) and is entirely planar. The minidisk laser operates in "whispering gallery" modes around the perimeter of the disk, indicating the feasibility of the combination of processes in fabricating disk lasers. The same IILD + oxidation process is used to fabricate a two-dimensional active photonic lattice that is comprised of $sim$9-$mu$m microdisk lasers that are arranged in a triangular (hexagonal close-packed) lattice arrangement. The disks are closely spaced (11-$mu$m center-to-center spacing) such that they are strongly coupled. As a result of the coupling of the disks, the photonic lattice exhibits laser operation in bands of energy located around the microdisk modes. In addition, the photonic lattice emits beams of energy along six symmetrical "crystal" directions. The details of photonic lattice fabrication and characterization are described
Reliability and Mode Behavior of Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum Well Heterostructure Lasers by David Andrew Kellogg( )

1 edition published in 2001 in English and held by 1 WorldCat member library worldwide

Data are presented on oxide-confined AlxGa1-xAs-GaAs quantum well heterostructures with oxide-AlxGa1-xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and temperature. The evaluation after 5+ years shows that a quick "sealing" oxidation prevents destructive hydrolyzation
moreShow More Titles
fewerShow Fewer Titles
Audience Level
Audience Level
  Kids General Special  
Audience level: 0.59 (from 0.56 for Junction e ... to 0.99 for Junction e ...)

Alternative Names
Holonyak, N. 1928-

Holonyak, N., Jr., 1928-

Holonyak, Nick (junior)

Nick Holonyak Amerikaans natuurkundige

Nick Holonyak amerikansk fysikar

Nick Holonyak amerikansk fysiker

Nick Holonyak ceapadóir Meiriceánach

Nick Holonyak Jr.

Nick Holonyak Jr inventore statunitense

Nick Holonyak US-amerikanischer Physiker und Erfinder

Ник Холоняк американски инженер и откривател

Нік Голоняк

Холоньяк, Ник

ניק הולונייק

نيك هولنياك مخترع أمريكي

نیک هولونیاک مهندس، مخترع و فیزیک‌دان آمریکایی

निक होलोनिक

নিক হলোনিয়াক

ნიკ ჰოლონიაკი ამერიკელი ინვესტორი


尼克·何倫亞克 American inventor