WorldCat Identities

Crandall, Richard S.

Overview
Works: 14 works in 20 publications in 1 language and 1,224 library holdings
Roles: Author
Publication Timeline
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Most widely held works by Richard S Crandall
Unusual capacitance emission transients in CIGS caused by large defect entropy changes by David L Young( )

3 editions published in 2005 in English and held by 311 WorldCat member libraries worldwide

Capacitance transient data from bias-pulse experiments on CdS/CIGS solar cells show an unusual behavior at high temperatures. Above 350 K, a minority-carrier trap, with a larger activation energy than a majority-carrier trap, emits faster than the lower activation-energy minority trap. A simple enthalpy model for trap emission cannot explain this counterintuitive behavior; but the more complete Gibbs free-energy model that includes entropy can explain it. We show that entropy plays a major role in carrier emission from traps in CIGS
Characterization of a dominant electron trap in GaNAs using deep-level transient spectroscopy by Steven Wade Johnston( )

2 editions published in 2006 in English and held by 289 WorldCat member libraries worldwide

Applications of admittance spectroscopy in photovoltaic devices beyond majority-carrier trapping defects : preprint( )

1 edition published in 2011 in English and held by 283 WorldCat member libraries worldwide

Admittance spectroscopy is commonly used to characterize majority-carrier trapping defects. In today's practical photovoltaic devices, however, a number of other physical mechanisms may contribute to the admittance measurement and interfere with the data interpretation. Such challenges arise due to the violation of basic assumptions of conventional admittance spectroscopy such as single-junction, ohmic contact, highly conductive absorbers, and measurement in reverse bias. We exploit such violations to devise admittance spectroscopy-based methods for studying the respective origins of "interference": majority-carrier mobility, non-ohmic contact potential barrier, minority-carrier inversion at hetero-interface, and minority-carrier lifetime in a device environment. These methods are applied to a variety of photovoltaic technologies: CdTe, Cu(In, Ga)Se2, Si HIT cells, and organic photovoltaic materials
Evidence of the Meyer-Neldel rule in InGaAsN alloys : consequences for photovoltaic materials : preprint by Steven Wade Johnston( )

1 edition published in 2003 in English and held by 273 WorldCat member libraries worldwide

Amorphous thin films for solar-cell applications : final report for period September 11, 1979 - September 10, 1980 by D. E Carlson( )

2 editions published in 1980 in English and held by 18 WorldCat member libraries worldwide

Amorphous boron-silicon-hydrogen alloys for thin films heterojunction solar-cell : quarterly technical progress report no. 1 for June 1 - August 31, 1970 by Richard S Crandall( )

2 editions published in 1980 in English and held by 17 WorldCat member libraries worldwide

Amorphous thin films for solar-cell applications : quarterly report no. 1 for September 11- December 10, 1979 by D. E Carlson( )

2 editions published in 1979 in English and held by 16 WorldCat member libraries worldwide

Amorphous thin films for solar-cell applications by D. E Carlson( Book )

1 edition published in 1979 in English and held by 8 WorldCat member libraries worldwide

The present research program involves five tasks: theoretical modeling, deposition and doping studies, experimental methods for the characterization of a-Si:H, formation of solar-cell structures, and theoretical and experimental evaluation of solar-cell parameters. In the section on theoretical modeling, a theory for the quantum efficiency to produce free electron-hole pairs in hydrogenated amorphous silicon (a-Si:H) is presented. Recent results obtained with the rf magnetron deposition system are reported. Experimental results are included that show the deleterious effect of adding either helium or hydrogen to an SiH₄ discharge. Other experiments have shown that adding SiF₄ to SiH₄ discharges decreases the photoluminescence intensity of the a-Si:H:F films. Experimental results for the band mobilities, minority-carrier diffusion lengths (~0.05 to 0.18 mu m), and density of defect states are given. Information about the density of gap states has been obtained from measurements of the photoconductivity and from tunneling measurements. Information on some optimized fabrication parameters for inverted p-i-n cells is given. Also, the theoretical and experimental evaluation of solar-cell parameters is discussed. The breakdown voltage of p-i-n cells has been investigated, and a degradation has been observed in these cells after forward biasing to +3 V. The degradation of Pd-Schottky-barrier cells is due to the diffusion of Pd as well as OH groups into the a-Si:H
Trap spectroscopy of a-Si:H diodes using transient current techniques by Richard S Crandall( )

1 edition published in 1980 in English and held by 2 WorldCat member libraries worldwide

An overview of safety assessment, regulation, and control of hazardous material use at NREL by B. P Nelson( Book )

1 edition published in 1992 in English and held by 2 WorldCat member libraries worldwide

Field collapse due to band tail charge in amorphous silicon cells by Qi Wang( Book )

1 edition published in 1996 in English and held by 2 WorldCat member libraries worldwide

Only in fun : ladies' serio-comic song by Richard S Crandall( )

1 edition published in 1874 in English and held by 1 WorldCat member library worldwide

Safety Analysis Report for the use of hazardous production materials in photovoltaic applications at the National Renewable Energy Laboratory by Richard S Crandall( Book )

1 edition published in 1992 in English and held by 1 WorldCat member library worldwide

Evidence of the Meyer-Neldel rule in InGaAsN alloys : consequences for photovoltaic materials : preprint by Steven Wade Johnston( Book )

1 edition published in 2003 in English and held by 1 WorldCat member library worldwide

 
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Audience level: 0.45 (from 0.42 for Trap spect ... to 0.97 for Trap spect ...)

Alternative Names
Crandal, Richard S.

Crandall, R. S. (Richard S.)

Languages
English (20)