Drouhin, Henri-Jean M.
Overview
| Works: | 23 works in 113 publications in 2 languages and 940 library holdings |
|---|---|
| Genres: | Conference papers and proceedings Academic theses Speeches Nonfiction films |
| Roles: | Editor, Author, Publishing director, Thesis advisor, Other |
| Classifications: | TK7874.887, 621.381 |
Publication Timeline
.
Most widely held works by
Henri-Jean M Drouhin
Spintronics III : 1-4 August 2010, San Diego, California, United States by Spintronics(
)
9 editions published in 2010 in English and held by 103 WorldCat member libraries worldwide
9 editions published in 2010 in English and held by 103 WorldCat member libraries worldwide
Spintronics : 10-14 August 2008, San Diego, California, USA by Spintronics(
)
10 editions published in 2008 in English and held by 97 WorldCat member libraries worldwide
10 editions published in 2008 in English and held by 97 WorldCat member libraries worldwide
Spintronics IV : 21-24 August 2011, San Diego, California, United States by Spintronics(
)
8 editions published in 2011 in English and held by 95 WorldCat member libraries worldwide
8 editions published in 2011 in English and held by 95 WorldCat member libraries worldwide
Spintronics V : 12-16 August 2012, San Diego, California, United States by
Henri-Jean M Drouhin(
)
10 editions published in 2012 in English and held by 92 WorldCat member libraries worldwide
Annotation
10 editions published in 2012 in English and held by 92 WorldCat member libraries worldwide
Annotation
Spintronics II : 2-5 August 2009, San Diego, California, United States by
M Razeghi(
)
8 editions published in 2009 in English and held by 89 WorldCat member libraries worldwide
Annotation
8 editions published in 2009 in English and held by 89 WorldCat member libraries worldwide
Annotation
Spintronics VI : 25-29 August 2013, San Diego, California, United States(
)
8 editions published in 2013 in English and held by 86 WorldCat member libraries worldwide
Proceedings of SPIE offer access to the latest innovations in research and technology and are among the most cited references in patent literature
8 editions published in 2013 in English and held by 86 WorldCat member libraries worldwide
Proceedings of SPIE offer access to the latest innovations in research and technology and are among the most cited references in patent literature
Spintronics VII : 17-21 August 2014, San Diego, California, United States by Spintronics Symposium(
)
9 editions published in 2014 in English and Undetermined and held by 85 WorldCat member libraries worldwide
Annotation
9 editions published in 2014 in English and Undetermined and held by 85 WorldCat member libraries worldwide
Annotation
Spintronics IX : September 26, 2016, San Diego, California, United State by Spintronics (Conference)(
Visual
)
7 editions published in 2016 in English and Undetermined and held by 75 WorldCat member libraries worldwide
7 editions published in 2016 in English and Undetermined and held by 75 WorldCat member libraries worldwide
Spintronics VIII : 9-13 August 2015, San Diego, California, United States by Spintronics (Conference)(
)
6 editions published in 2015 in English and held by 71 WorldCat member libraries worldwide
6 editions published in 2015 in English and held by 71 WorldCat member libraries worldwide
Spintronics X : 6-7 August 2017 San Diego, California, United States by
Henri-Jean M Drouhin(
)
5 editions published in 2017 in English and Undetermined and held by 50 WorldCat member libraries worldwide
5 editions published in 2017 in English and Undetermined and held by 50 WorldCat member libraries worldwide
Spintronics XI : 19-23 August 2018, San Diego, California, United States by Spintronics(
)
3 editions published in 2018 in English and held by 49 WorldCat member libraries worldwide
3 editions published in 2018 in English and held by 49 WorldCat member libraries worldwide
Physique et hautes technologies : semi-conducteurs by
Michel Voss(
Book
)
8 editions published between 1998 and 2000 in French and held by 14 WorldCat member libraries worldwide
8 editions published between 1998 and 2000 in French and held by 14 WorldCat member libraries worldwide
Analyse en énergie et en polarisation des électrons émis par une photocathode d'arséniure de gallium en affinité négative by
Henri-Jean M Drouhin(
Book
)
5 editions published in 1984 in French and held by 10 WorldCat member libraries worldwide
5 editions published in 1984 in French and held by 10 WorldCat member libraries worldwide
Sélection en énergie à très haute résolution des électrons émis par une photocathode d'arséniure de gallium en état
d'affinité négative by
Henri-Jean M Drouhin(
Book
)
5 editions published in 1982 in French and held by 7 WorldCat member libraries worldwide
5 editions published in 1982 in French and held by 7 WorldCat member libraries worldwide
Semiconducteurs et composants : majeure électronique, composants et systèmes, majeure de physique by
Michel Voos(
Book
)
2 editions published in 2001 in French and held by 7 WorldCat member libraries worldwide
2 editions published in 2001 in French and held by 7 WorldCat member libraries worldwide
Semiconducteurs et composants by
Michel Voos(
Book
)
2 editions published between 2002 and 2005 in French and held by 2 WorldCat member libraries worldwide
2 editions published between 2002 and 2005 in French and held by 2 WorldCat member libraries worldwide
Spintronics VIII(
)
2 editions published in 2015 in Undetermined and held by 2 WorldCat member libraries worldwide
Annotation
2 editions published in 2015 in Undetermined and held by 2 WorldCat member libraries worldwide
Annotation
Study of organic semiconductor / ferromagnet interfaces by spin-polarized electron scattering and photoemission by
Fatima Zohra Djeghloul(
)
1 edition published in 2013 in English and held by 1 WorldCat member library worldwide
J'ai étudié les interfaces semi-conducteur organiques/ferromagnétique par la diffusion des électrons et la photoémission résolue en spin. Dans la première partie, un comportement inattendu de la réflexion d'électrons dépendante de spin à ces interfaces est observé. En fait, une couverture sous-monocouche des molécules organiques rend l'amplitude de réflexion d'électrons indépendante de spin, c.à.d. que la réflectivité ainsi que la phase de réflexion devient indépendante de l'orientation du spin des électrons incidents. Bien que je ne sois pas en mesure d'identifier la cause de ce phénomène, je montre qu'il s'agit d'un phénomène très général qui est indépendante de l'énergie des électrons primaires, du choix du substrat ferromagnétique, du choix de la molécule organique, et de l'orientation de la polarisation initiale. Il n'est pas du à un changement de l'aimantation de surface, à une dépolarisation des électrons primaires, ou à une interaction directe des molécules avec le substrat ferromagnétique. En outre, la théorie ne prédit pas les résultats expérimentaux et d'autres recherches sont donc nécessaires pour dévoiler la physique derrière ces observations. Dans la seconde partie de ma thèse, les expériences de photoémission résolue en spin sont réalisées au synchrotron SOLEIL. Le résultat principal est l'observation d'un état électronique induite par les molécules organiques près du niveau de Fermi qui est hautement polarisé en spin. Des mesures en fonction de l'épaisseur de la couche organique permettent d'identifier le caractère interfacial de cet état électronique. Enfin, ces résultats sont comparés avec des calculs théoriques effectués à l'institut
1 edition published in 2013 in English and held by 1 WorldCat member library worldwide
J'ai étudié les interfaces semi-conducteur organiques/ferromagnétique par la diffusion des électrons et la photoémission résolue en spin. Dans la première partie, un comportement inattendu de la réflexion d'électrons dépendante de spin à ces interfaces est observé. En fait, une couverture sous-monocouche des molécules organiques rend l'amplitude de réflexion d'électrons indépendante de spin, c.à.d. que la réflectivité ainsi que la phase de réflexion devient indépendante de l'orientation du spin des électrons incidents. Bien que je ne sois pas en mesure d'identifier la cause de ce phénomène, je montre qu'il s'agit d'un phénomène très général qui est indépendante de l'énergie des électrons primaires, du choix du substrat ferromagnétique, du choix de la molécule organique, et de l'orientation de la polarisation initiale. Il n'est pas du à un changement de l'aimantation de surface, à une dépolarisation des électrons primaires, ou à une interaction directe des molécules avec le substrat ferromagnétique. En outre, la théorie ne prédit pas les résultats expérimentaux et d'autres recherches sont donc nécessaires pour dévoiler la physique derrière ces observations. Dans la seconde partie de ma thèse, les expériences de photoémission résolue en spin sont réalisées au synchrotron SOLEIL. Le résultat principal est l'observation d'un état électronique induite par les molécules organiques près du niveau de Fermi qui est hautement polarisé en spin. Des mesures en fonction de l'épaisseur de la couche organique permettent d'identifier le caractère interfacial de cet état électronique. Enfin, ces résultats sont comparés avec des calculs théoriques effectués à l'institut
Spintronics XIV(
Book
)
1 edition published in 2021 in Undetermined and held by 1 WorldCat member library worldwide
1 edition published in 2021 in Undetermined and held by 1 WorldCat member library worldwide
Synthèse et maîtrise de la croissance de nanocristaux : applications aux composants à base de semi-conducteurs à grande
bande interdite by
Eric Vinod Sandana(
Book
)
in French and held by 1 WorldCat member library worldwide
The objective of this work was to grow, study & control the properties of ZnO thin films & nanostructures. Three growth processes were studied: Metal-Organic Chemical Vapour Deposition (MOCVD), Pulsed Laser Deposition (PLD) & Physical Vapour Transport (PVT). The substrates used were: c-Al2O3; Si, ZnO, steel, mylar & paper. The ZnO was characterized using scanning electron microscopy, photoluminescence , cathodoluminescence , X-ray diffraction & optical reflectivity. A very wide range of ZnO nanostructures was observed, including nanorods, nanoneedles, nanocombs & some novel structures. Self-forming arrays of vertically aligned nanostructures (moth-eye nanocones & nanocolumns (vertical & broadening)) could be obtained by PLD without the use of a catalyst. The various characterisation techniques indicated that these arrays were significantly better crystallized & more highly oriented than those grown by PVT/MOCVD. The feasibility of devices was also demonstrated. A nanoLED (n-nanoZnO/p-Si) had a rectifying I/V characteristic & gave blue/white electroluminescence. Moth-eye coatings on Si, resembling black-silicon, were used as templates for the growth of GaN by MOCVD. Angular-dependent specular reflection indicated that the GaN/ZnO nanostructures were broadband antireflection coatings with < 1% reflection over the visible spectrum for incidence angles < 60°. A back-gate geometry ZnO/Si3N4/SiO2/Si transparent thin film transistor was fabricated. It demonstrated a rectifying transfer characteristic, hard saturation & enhancement mode operation. Id was in the mA range & the VON was ~ 0V. Finally, conductive Amorphous Oxide Semiconductor ZnO was grown at RT on paper & mylar
in French and held by 1 WorldCat member library worldwide
The objective of this work was to grow, study & control the properties of ZnO thin films & nanostructures. Three growth processes were studied: Metal-Organic Chemical Vapour Deposition (MOCVD), Pulsed Laser Deposition (PLD) & Physical Vapour Transport (PVT). The substrates used were: c-Al2O3; Si, ZnO, steel, mylar & paper. The ZnO was characterized using scanning electron microscopy, photoluminescence , cathodoluminescence , X-ray diffraction & optical reflectivity. A very wide range of ZnO nanostructures was observed, including nanorods, nanoneedles, nanocombs & some novel structures. Self-forming arrays of vertically aligned nanostructures (moth-eye nanocones & nanocolumns (vertical & broadening)) could be obtained by PLD without the use of a catalyst. The various characterisation techniques indicated that these arrays were significantly better crystallized & more highly oriented than those grown by PVT/MOCVD. The feasibility of devices was also demonstrated. A nanoLED (n-nanoZnO/p-Si) had a rectifying I/V characteristic & gave blue/white electroluminescence. Moth-eye coatings on Si, resembling black-silicon, were used as templates for the growth of GaN by MOCVD. Angular-dependent specular reflection indicated that the GaN/ZnO nanostructures were broadband antireflection coatings with < 1% reflection over the visible spectrum for incidence angles < 60°. A back-gate geometry ZnO/Si3N4/SiO2/Si transparent thin film transistor was fabricated. It demonstrated a rectifying transfer characteristic, hard saturation & enhancement mode operation. Id was in the mA range & the VON was ~ 0V. Finally, conductive Amorphous Oxide Semiconductor ZnO was grown at RT on paper & mylar
more
fewer
Audience Level
| 0 |
 |
1 | ||
| General | Special | |||
Related Identities
- Razeghi, M. Publishing director Author Editor Engraver
- Wegrowe, Jean-Eric Publishing director Editor
- SPIE (Society)
- Society of Photo-optical Instrumentation Engineers Organizer of meeting
- Voos, Michel Author
- Ecole polytechnique (France) Département de physique
- Drévillon, Bernard
- Society of Photo-optical Instrumentation Engineers (U.S.)
- SPIE Contributor Sponsor
- École polytechnique (Palaiseau, Essonne) Degree grantor
Associated Subjects
