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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI ULIS).

Author: IEEE Staff,
Publisher: Piscataway : IEEE March 2018.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
The fourth joint EUROSOI ULIS event will be hosted by the University of Granada in Granada, Spain The focus of the sessions is on advanced nanoscale devices, including SOI technology Papers in the following areas are solicited Physical mechanisms and innovative SOI like devices New channel materials for CMOS strained Si, strained SOI, SiGe, GeOI, III V and high mobility materials on insulator carbon nanotubes  Read more...
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Details

Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: IEEE Staff,
ISBN: 9781538648124 1538648121
OCLC Number: 1053699099
Target Audience: Scholarly & Professional
Description: 1 online resource

Abstract:

The fourth joint EUROSOI ULIS event will be hosted by the University of Granada in Granada, Spain The focus of the sessions is on advanced nanoscale devices, including SOI technology Papers in the following areas are solicited Physical mechanisms and innovative SOI like devices New channel materials for CMOS strained Si, strained SOI, SiGe, GeOI, III V and high mobility materials on insulator carbon nanotubes graphene and other two dimensional materials Nanometer scale devices technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications New functionalities in silicon compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.

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