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Analysis and design of MOSFETs : modeling, simulation, and parameter extraction

Author: Juin J Liou; Adelmo Ortiz-Conde; F Garcia-Sanchez
Publisher: Boston, MA : Kluwer Academic Publishers, ©1998.
Edition/Format:   Print book : EnglishView all editions and formats
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Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor  Read more...

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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Juin J Liou; Adelmo Ortiz-Conde; F Garcia-Sanchez
ISBN: 0412146010 9780412146015 079238251X 9780792382515
OCLC Number: 39391273
Description: xiv, 349 pages : illustrations ; 24 cm
Contents: 1. MOSFET physics and modeling --
2. MOSFET simulation using device simulators --
3. Extraction of the threshold voltage of MOSFETs --
4. Methods for extracting the effective channel length of MOSFETs --
5. Extraction of the source and drain series resistances of MOSFETs --
6. Parameter extraction of lightly-doped drain (LDD) MOSFETs --
App. A. Physical constants and unit conversions --
App. B. Properties of germanium, silicon, and gallium arsenide (at 300 K) --
App. C. Properties of SiO[subscript 2] and Si[subscript 3]N[subscript 4] (at 300 K) --
App. D. Derivation of the integral function and its applications to parameter extraction.
Responsibility: by J.J. Liou and A. Ortiz-Conde, and F. Garcia-Sánchez.
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