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Compound semiconductors 2002 : proceedings of the twenty-ninth International Symposium on Compound Semiconductors held in Lausanne, Switzerland, 7-10 October 2002

Author: M Ilegems; Günter Weimann; Joachim Wagner; Gunter Weimann; Institute of Physics (Great Britain)
Publisher: Boca Raton, FL : CRC Press, [003] ©2003
Series: Institute of Physics Conference Series
Edition/Format:   eBook : Document : Conference publication : English : First editionView all editions and formats
Summary:
"A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial  Read more...
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Genre/Form: Electronic books
Conference papers and proceedings
Congresses
Material Type: Conference publication, Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: M Ilegems; Günter Weimann; Joachim Wagner; Gunter Weimann; Institute of Physics (Great Britain)
ISBN: 9781482269109 1482269104 9781420034578 142003457X
OCLC Number: 1027752180
Description: 1 online resource : text file, PDF
Contents: Cover; Half Title; Series Page; Title Page; Copyright Page; Contents; International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award; ISCS Quantum Devices Award; ISCS Young Scientist Award; Preface; Symposium Committees; Section 1: Growth; GaAs on silicon using an oxide buffer layer; Ultra shallow GaAs sidewall tunnel junctions implemented with low-temperature area selective regrowth; Growth and properties ofpolycrystalline GaN on ZnO/Si substrates by ECR-MBE; Single crystalline InN films grown on Si (111) substrates; Growth and evaluation of CdTe/Si (111) by hot wall epitaxy A surface reconstruction functioning as a micro mask during in-situ layer-by-layeretching of GaAs(111)B using AsBr 3Comparative study ofp-type dopants, Mg and Be in GaN grown by RF-MBE; Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence; Section 2: Processing and Characterization; Contribution of interface states and bulk traps to GaAs MIS admittance; Electrical isolation of p-type InP and InGaAs layers by iron implantation: Effects of substrate temperature Inductively coupled argon plasma enhanced quantum well intermixing in InGaAs/InGaAsP laser structureAnnealing studies of Si-implanted GaN by Hall-effect and photoluminescence measurements; Optical evaluation of spatial carrier concentration fluctuations in doped InP substrates; An ""anomalous"" drift of defects under electric field in CdSe and CdS single crystals; Injection energy dependence of electron thermalization length in AlGaAs/GaAs quantum well structures; Optical and structural investigations of GeSi02 systems Thermal quenching of emission of self-assembled InAs quantum dots embedded into InGaAs/GaAs MQWGuided surface-acoustic-wave modes in AIN layers grown on SiC substrates; Photoluminescence from deep levels in Fe-doped InP substrates; Many-body effects as probe of defects presence in heavily doped AlGaAs/InGaAs/GaAs heterostructures; Two-dimensional mapping of resistivity in semi-insulating GaAs wafers with large diameter using a nondestructive technique; Sonic-stimulated temperature rise around dislocation; The cluster variation method for semiconductor alloys Exciton formation inhibition in GalnAsllnP Fe doped quantum wellsCompositional dependence of electron traps in Ga(As, N) grown by molecular-beam epitaxy; The influence of the quantum lifetime on the width of the quantum Hall plateaus; lntersubband transitions in strain compensated InGaAs/ AlAs quantum well structures grown on InP; Interfacial and piezoelectric properties of highly strained InGaAs/GaAs quantum well structures grown on (111)A GaAs substrates by MOVPE; Section 3: Quantum-Wires and -Dots
Series Title: Institute of Physics Conference Series
Responsibility: edited by Marc Ilegems, Günter Weimann and Joachim Wagner.

Abstract:

"A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial growth, quantum confined emitters and detectors, quantum wires and dots, ultrafast transistors, and various compound materials."--Provided by publisher.

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