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Compound semiconductors 2004 : proceedings of the thirty-first International Symposium on Compound Semiconductors held in Seoul, Korea, 12-16 September 2004

Author: Jong-Chun Woo
Publisher: Boca Raton, FL : CRC Press, Taylor & Francis Group, 2018.
Series: Institute of Physics conference series, no. 184.
Edition/Format:   eBook : Document : Conference publication : EnglishView all editions and formats
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Genre/Form: Conference papers and proceedings
Electronic books
Congresses
Material Type: Conference publication, Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Jong-Chun Woo
ISBN: 9781420034561 1420034561
OCLC Number: 1042329414
Notes: First published 2005 by IOP Publishing Ltd.
Description: 1 online resource.
Contents: Cover --
Half Title --
Title Page --
Copyright Page --
International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award --
ISCS Quantum Devices Award --
Young Scientist Award --
Preface --
ISCS 2004 Symposium Committees --
Acknowledgments --
Contents --
Section 1: Nanostructure electronic and optoelectronic devices --
A Lagrangian Approach to Wavefunction Engineering of Layered Quantum Semiconductor Structures --
Dependence of Band-Offset on Sb content in AlGaAs/ GaAsSb Quantum Wells Grown on GaAs by MBE --
Band Alignment Analysis of Strained GaAsSb/InGaAs Quantum Wells --
Fabrication of Self-Assembled Nanodots at Arbitrary Locations by Spatially Controlled Implant Source Growth --
Anomalous Current Leakage and Depletion Width Control in Nanometer Scale Schottky Gates Formed on AlGaAs/GaAs Surface --
Nonlinear Variable Capacitance Characteristics in GaInP/GaAs Triple Barrier Resonant Tunneling Diodes --
Single electron transistors using single self-assembled InAs quantum dots --
70 nm InGaAs/InAlAs/GaAs Metamorphic HEMTs for High Frequency Applications --
Two-stage high gain W-band amplifier using metamorphic HEMT technology --
Improved Breakdown Voltage and Output Conductance Characteristics of GaAs pHEMTs using Composite Gate fabricated by Digital Recess Method --
High performance 0.1 pm GaAs PHEMT with Si pulse doped cap layer for 77GHz car radar --
Development of a Highly-Reliable Over 200 W GaN-HEMT Power Amplifier --
High Speed InP HBT Driver IC for Laser Modulations --
(GaIn)(NAsSb): The Challenges for Long Wavelength Communications Devices --
Ultra-high speed internal RF-gain InGaAs/InAlAs avalanche photodetector --
Very high sensitivity operation in quantum dot infrared photodetectors --
RF-enhanced InGaAs/InAlAs uni-traveling-carrier photodetector. Force/displacement Detection using Quantum Effects in InAs/Al0.5Ga0.5Sb Two-dimensional Electron Systems --
Self-Consistent Analysis of Electron Transport Properties in Quantum Wires --
Insulator-quantum Hall transitions in a two-dimensional electron gas using self-assembled InAs dots --
Excitonic diamagnetic shift and oscillating Zeeman splitting in quantum wire: Magneto-photoluminescence study --
AlGaAs/InGaAs PHEMT with Multiple Quantum Wire Channels --
20 Gbps operation of RTD/HBT MOBILE (MOnostable Bistable Logic Element) IC based on an InP technology --
Speed-Power Performances of Quantum Wire Switches Controlled by Nanometer-Scale Schottky Wrap Gates for GaAs based Hexagonal BDD Quantum LSIs --
FDTD Analysis of the Self-aligned Total Internal Reflection Mirrors for Micro-Ring Cavity Resonators --
40Gbps Waveguide Photodiode with Responsivity more than 1.0A/W, Large Alignment Tolerance, and High Saturation Current --
Section 4: Wide and narrow gap materials and bandgap engineering --
The Crystal Growth of GaN on MOCVD-Deposited GaN by the Method of Sublimation --
Surface morphologies of AlGaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by rf-MBE --
Growth and Characterization of High In Composition InGaN epilayers by rf-MBE --
Cubic InN Growth on R-plane (1012) Sapphire by ECR-MBE --
AlGaN/GaN Hetero-structure on GaN Templates with High Al Composition and Low resistance by RF-MBE --
High Quality AlGaN/AlN Superlattices grown on AIN/Sapphire Template by MOVPE --
Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE --
Defect control in Ga(In)NAs films grown by atomic H assisted RF-MBE --
Electrical properties in hexagonal InN thin films --
Optical Phonon Dephasing Channels in GaN revealed by the Coherent Phonon Method. Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication --
Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS --
Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy --
AlGaN/GaN MIS-HEMTs with ZrO2 Gate Insulator --
Self-heating Effect Study of AlGaN/GaN HEMT using Pulsed IVT on the Isothermal Conditions --
Power performance enhancement of metamorphic In0.3Al0.7As/In0.45Ga0.55 As HEMTs using pseudomorphic channel design --
Highly Reflective and Crack-free Si-doped AlN/GaN Distributed Bragg Reflectors Grown on 6H-SiC(0001) by Molecular Beam Epitaxy --
High Power InGaN/GaN Flip-Chip Blue and White LED --
High power AlInGaN-based multi-quantum well laser diode with low operating current --
Crack-free ZnO layer growth on glass substrates by MgO-buffer layer --
Effect of ambient gases on structural and optical characteristics of post annealed ZnO films --
Activation of group-I acceptors by hydrogen codoping in ZnO --
Optical properties of cubic MgZnO thin films --
Parameters required to simulate electric characteristics of SiC devices --
Enhancement of ionization efficiency of acceptors by their excited states in heavily doped wide bandgap semiconductors --
High Extraction Efficiency Light-Emitting-Diodes using Hemispherical Corrugated Interface Substrate --
Transconductance Linearity Improvement of E-pHEMT at High Vgs --
Section 5: Epitaxy and Processing --
First-principles investigations of Ga and As adsorption properties on a GaAs(110) surface --
Development of plasma-free etch chemistry to realize defect-free GaAs micromechanical resonator structures --
Patterned InGaAs Quantum Dots by Selective Area MOCVD --
Growth of AlGaN on Al2O3 substrates by mixed-source HVPE --
CrN Buffer Layer Study For GaN Growth Using Molecular Beam Epitaxy(MBE). Growth and Characterization of HVPE GaN on c-sapphire with CrN Buffer Layer --
Doping of GaN, AlGaN by mixed-source HVPE --
Investigation of thermal degradation on structural and optical qualities of InGaN/InGaNMQWs --
Low threshold current GalnNAs QW LD with InGaAs/GaNAs barriers --
The effect of surface treatment on Zinc Oxide --
Photoluminescence study of ZnO thin films deposited by pulsed laser ablation --
Photoluminescence from Single Hexagonal Nano-Wire Grown by Selective Area MOVPE --
Diluted Semiconductors Formed from Energetic Beams --
A New GaAs MOS Varactor Fabricated Using a Low-Cost GaAs Oxidation Technology --
Section 6: Characterization --
Measurements for nanocrystals in silicon deposited by rf-magnetron sputtering --
Structure Properties and Phase Evolution of MgxZn1-xO Layers Grown on c-sapphire by P-MBE --
Bi-induced phonons in GaAs1-xBix --
Temporal Behavior of Absorption Changes and Yellow Luminescence in Thin InGaN Epilayers --
High-energy photoemission studies of transition metal ion doped III-V nitrides --
Strain effect on energy band of InAs/InP quantum dots by GaAs layer insertion --
Electron-Hole Separation in InAs Quantum Dots --
Spin relaxation in charged InAs/GaAs quantum dots --
Anti-parallel spin interaction between the carriers in coupled quantum dots --
Raman study of biaxial strain in InGaN-GaN self-assembled quantum dots grown on sapphire (0001) --
Optical properties of II-VI-based magnetic semiconductor self-assembled quantum dots --
Interpretation of Leakage Current in Ni/n-(Al)GaN Schottky Structures and Its Influence on Surface Preparation Conditions --
An analysis of the kink phenomena at lower drain current in GaAs-based short-gate MHEMTs using the hydrodynamic transport simulation --
Demonstration of the formation of GaAs homojunction far-infrared detection by reflection measurements.
Series Title: Institute of Physics conference series, no. 184.
Responsibility: edited by Jong-Chun Woo [and four others].

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