Discussion on Design Feasibility and Prospect of High-Performance Sub-50 nm Channel Single-Gate SOI MOSFET Based on the ITRS Roadmap (Article, 2016) [WorldCat.org]
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Discussion on Design Feasibility and Prospect of High-Performance Sub-50 nm Channel Single-Gate SOI MOSFET Based on the ITRS Roadmap

Edition/Format: Chapter Chapter : English
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ISBN: 9781119107361 9781119107354
Publication:Omura, Yasuhisa; MOS Devices for Low-Voltage and Low-Energy Applications; 147-163; John Wiley & Sons Singapore Pte. Ltd : Singapore
Language Note: English
Unique Identifier: 7322666543
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