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Epitaxial graphene on silicon carbide : modeling, characterization, and applications

Author: Gemma Rius; Philippe Godignon
Publisher: Singapore : Pan Stanford Publishing, [2018]
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
"This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Gemma Rius; Philippe Godignon
ISBN: 9781315186146 1315186144 9781351736220 1351736221 9781351736206 1351736205 9814774200 9789814774208
OCLC Number: 1020790033
Description: 1 online resource : illustrations (some color).
Contents: Chapter 1 Epitaxial graphene on SiC substrate: A view from a specialist of SiC growth and materials science / Gabriel Ferro --
chapter 2 Growth Mechanism, Structures, and Properties of Graphene on SiC(0001) Surfaces: Theoretical and Experimental Studies at the Atomic Scale / Wataru Norimatsu Stephan Irle Michiko Kusunoki --
chapter 3 Fabrication of Graphene by Thermal Decomposition of SiC / Gholam Reza Yazdi Tihomir Iakimova Rositza Yakimova --
chapter 4 Nanoscale electrical and structural properties of epitaxial graphene interface with sic(0001) / Filippo Giannazzo Ioannis Deretzis Antonino La Magna Giuseppe Nicotra Corrado Spinella Fabrizio Roccaforte Rositza Yakimova --
chapter 5 Theory of graphene growth on sic substrate / Hiroyuki Kageshima --
chapter 6 Epitaxial Graphene on SiC from the Viewpoint of Planar Technology / Gemma Rius Philippe Godignon --
chapter 7 Beauty of Quantum Transport in Graphene / Benoit Jouault Félicien Schopfer Wilfrid Poirier.
Responsibility: edited by Gemma Rius, Philippe Godignon.

Abstract:

"This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum-processing, partial-pressure, or graphite cap controlled-sublimation techniques. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia."--Provided by publisher.

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