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Genre/Form: | Thèses et écrits académiques |
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Material Type: | Thesis/dissertation, Manuscript |
Document Type: | Book, Archival Material |
All Authors / Contributors: |
Caroline Guilhalmenc; Sorin Cristoloveanu; Pierre Gentil, microeÌlectonicien).; Yannis Stoemenos; Bernard Pichaud; André-Jacques Auberton-Hervé; Hubert Moriceau; Institut national polytechnique (Grenoble).; Laboratoire d'électronique et de technologie de l'information (Grenoble).; École doctorale de l'INPG.; Laboratoire d'électronique, de technologie et d'instrumentation. Département d'électronique et d'instrumentation nucléaire (France). |
OCLC Number: | 490329104 |
Description: | 1 vol. (149 p.) : ill. ; 30 cm. |
Responsibility: | Caroline Guilhalmenc ; sous la direction de Sorin Cristoloveanu. |
Abstract:
Silicon on insulator materials are very attractive for the production of new generation circuits for low voltage applications. To face the bulk silicon industry and to respond to the increasing interest for the ultra large scale integration, techniques for the formation of high quality SOI material are required. Defect generation mechanisms during the synthesis of two SOI substrates, Low Dose SIMOX and UNIBOND® (elaborated with the SIMOX and Smart-Cut® techniques, respectively), have been investigated. After low dose oxygen implantation (SIMOX process), the formation of buried oxide layers during high temperature annealing has been studied. The buried oxide dielectric quality has been improved with the understanding of oxide precipitate growth and ripening mechanism. Finally, a systematic study has been performed on the top silicon films in order to characterize the crystalline defects (dislocations, stacking faults) and the electrical properties of these two materials. This corresponds to the first results concerning the comparison of these new promising SOI materials for the production of high performance integrated circuits.
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Related Subjects:(5)
- Technologie silicium sur isolant.
- Recuit des métaux.
- Sciences appliquees -- Electronique
- Matériau SOI -- SIMOX -- Smart-Cut® -- UNIBOND® -- Oxyde -- Recuit -- Défauts -- Fabrication microélectronique -- Formation défaut -- Technologie silicium-sur-isolant -- Couche mince -- Silicium -- Na
- SOI substrates -- SIMOX -- Smart-Cut® -- UNIBOND® -- Oxide -- Annealing -- Défects -- Microelectronic fabrication -- Silicon on insulator technology -- Thin film -- Nc -- Na