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Handbook of GaN semiconductor materials and devices

Author: Wengang Bi
Publisher: Boca Raton : Taylor & Francis, CRC Press, 2017.
Series: Series in optics and optoelectronics
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
"This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and  Read more...
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Genre/Form: Electronic books
Handbooks and manuals
Handbooks, manuals, etc
Additional Physical Format: Print version:
Handbook of GaN semiconductor materials and devices.
Boca Raton : Taylor & Francis, CRC Press, 2017
(DLC) 2017011253
(OCoLC)979567089
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Wengang Bi
ISBN: 9781351648059 1351648055 9781315152011 1315152010 9781498747141 1498747140 9781351638524 1351638521
OCLC Number: 1007565792
Description: 1 online resource.
Contents: ""Cover""; ""Half Title ""; ""Title Page ""; ""Copyright Page ""; ""Table of Contents ""; ""Series Preface ""; ""Foreword ""; ""Preface ""; ""Editors ""; ""Contributors ""; ""Section I: Fundamentals ""; ""1: III-Nitride Materials and Characterization "" ""2: Microstructure and Polarization Properties of III-Nitride Semiconductors """"3: Optical Properties of III-Nitride Semiconductors ""; ""4: Electronic and Transport Properties of III-Nitride Semiconductors ""; ""Section II: Growth and Processing "" ""5: Growth Technology for GaN and AlN Bulk Substrates and Templates """"6: III-Nitride Metalorganic Vapor-Phase Epitaxy ""; ""7: Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications ""; ""8: Advanced Optoelectronic Device Processing "" ""Section III: Power Electronics """"9: Principles and Properties of Nitride-Based Electronic Devices ""; ""10: Power Conversion and the Role of GaN ""; ""11: Recent Progress in GaN-on-Si HEMT ""; ""12: Reliability in III-Nitride Devices ""; ""Section IV: Light Emitters "" ""13: Internal Quantum Efficiency for III-Nitrideâ#x80;#x93;Based Blue Light-Emitting Diodes """"14: White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends ""; ""15: Current Status and Trends for Green Light-Emitting Diodes ""
Series Title: Series in optics and optoelectronics
Responsibility: Wengang (Wayne) Bi, Hao-chung (Henry) Kuo, Pei-Cheng Ku, Bo Shen, editors.

Abstract:

"This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.Bo Shen is the Cheung Kong Professor at Peking University in China. "--Provided by publisher.

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