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Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge

Author: V V EmtsevN V AbrosimovV V KozlovskiD S PoloskinG A OganesyanAll authors
Edition/Format:   Downloadable article   Computer File : English
Publication:Semiconductors, volume:52 number:13 day:24 month:12 year:2018 pages:1677-1685 date:12.2018
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Material Type: Internet resource
Document Type: Internet Resource, Article, Computer File
All Authors / Contributors: V V Emtsev; N V Abrosimov; V V Kozlovski; D S Poloskin; G A Oganesyan; SpringerLink (Online service)
ISSN:1090-6479
OCLC Number: 1189577600
Description: Online-Ressource online resource.
Responsibility: by V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan

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