Introduction to magnetic random-access memory (eBook, 2017) [WorldCat.org]
skip to content
Introduction to magnetic random-access memory Preview this item
ClosePreview this item
Checking...

Introduction to magnetic random-access memory

Author: B Dieny; Ronald Barry Goldfarb; Kyung-Jin Lee
Publisher: Hoboken, New Jersey : John Wiley & Sons, [2017]
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based  Read more...
Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

Find a copy online

Links to this item

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: B Dieny; Ronald Barry Goldfarb; Kyung-Jin Lee
ISBN: 9781119079415 1119079411 9781119079354 1119079357 9781119079446 1119079446
OCLC Number: 1139905578
Notes: In IEEE-Wiley.
Description: 1 ressource en ligne
Contents: Basic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros --
Magnetic Properties of Materials for MRAM / Shinji Yuasa --
Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu --
Magnetization Dynamics / William E Bailey --
Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu --
Magnetic Back-End Technology / Michael C Gaidis --
Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno --
Appendix: Units for Magnetic Properties.
Responsibility: edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee.

Abstract:

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in  Read more...

Reviews

User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.