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Modeling nanowire and double-gate junctionless field-effect transistors

Author: Farzan Jazaeri; Jean-Michel Sallese
Publisher: Cambridge, United Kingdom ; New York : Cambridge University Press, 2018.
Edition/Format:   Print book : EnglishView all editions and formats

The first of its kind, this is a detailed introduction to this new and fast-developing field. It covers the design, modeling, and operation of junctionless field effect transistors (FETs), as well as  Read more...


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Additional Physical Format: ebook version :
Document Type: Book
All Authors / Contributors: Farzan Jazaeri; Jean-Michel Sallese
ISBN: 9781107162044 1107162041
OCLC Number: 1004183413
Description: xix, 233 pages ; 26 cm
Contents: 1. Introduction; 2. Review on modeling junctionless FETs; 3. The EPFL charge-based model of junctionless field-effect transistors; 4. Model driven design - space of junctionless FETs; 5. Generalization of the charge based model: accounting for inversion layers; 6. Predicted performances of junctionless FETs; 7. Short channel effects in symmetric junctionless double-gate FETs; 8. Modeling AC operation in symmetric double-gate and nanowire JL FETs; 9. Modeling asymmetric operation of double-gate junctionless FETs; 10. Modeling noise behavior in junctionless FETs; 11. Carrier mobility extraction methodology in JL and inversion mode FETs; 12. Revisiting the Junction FET: a junctionless FET with an gate capacitance; 13. Modeling junctionless FET with interface traps targeting biosensor applications; Appendix A. Design - space of twin gate junctionless vertical slit FETs; Appendix B. Transient off-current in junctionless FETs; Appendix C. Derivatives of mobile charge density with respect to VGS and VDS; Appendix D. Global charge density at drain in depletion mode; Appendix E. Global charge density at drain in accumulation mode; Appendix F. The EPFL Junctionless MODEL ver.1.0.
Responsibility: Farzan Jazaeri, École Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, École Polytechnique Fédérale de Lausanne.


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