MOS devices for low-voltage and low-energy applications (eBook, 2017) [WorldCat.org]
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MOS devices for low-voltage and low-energy applications

Author: Y Omura; Abhijit Mallik; N Matsuo
Publisher: Singapore ; Hoboken, NJ : John Wiley & Sons, 2017. ©2017
Edition/Format:   eBook : Document : EnglishView all editions and formats
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Omura, Y. (Yasuhisa).
MOS devices for low-voltage and low-energy applications.
Singapore : John Wiley & Sons Singapore Pte. Ltd., 2017
(DLC) 2016026240
(OCoLC)951506454
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Y Omura; Abhijit Mallik; N Matsuo
ISBN: 9781119107361 1119107369 9781119107378 1119107377 9781523115273 1523115270
OCLC Number: 965735579
Description: 1 online resource (xvii, 465 pages)
Contents: INTRODUCTION TO LOW-VOLTAGE AND LOW-ENERGY DEVICES. Why Are Low-Voltage and Low-Energy Devices Desired? --
History of Low-Voltage and Low-Power Devices --
Performance Prospects of Subthreshold Logic Circuits --
SUMMARY OF PHYSICS OF MODERN SEMICONDUCTOR DEVICES. Overview --
Bulk MOSFET --
SOI MOSFET --
Tunnel Field-Effect Transistors (TFETs) --
POTENTIAL OF CONVENTIONAL BULK MOSFETs. Performance Evaluation of Analog Circuits with Deep Submicrometer MOSFETs in the Subthreshold Regime of Operation --
Impact of Halo Doping on the Subthreshold Performance of Deep-Submicrometer CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications --
Study of the Subthreshold Performance and the Effect of Channel Engineering on Deep Submicron Single-Stage CMOS Amplifiers --
Subthreshold Performance of Dual-Material Gate CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications --
Performance Prospect of Low-Power Bulk MOSFETs --
POTENTIAL OF FULLY-DEPLETED SOI MOSFETs. Demand for High-Performance SOI Devices --
Demonstration of 100 nm Gate SOI CMOS with a Thin Buried Oxide Layer and its Impact on Device Technology --
Discussion on Design Feasibility and Prospect of High-Performance Sub-50 nm Channel Single-Gate SOI MOSFET Based on the ITRS Roadmap --
Performance Prospects of Fully Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuits for RF-ID Chips --
The Potential and the Drawbacks of Underlap Single-Gate Ultrathin SOI MOSFET --
Practical Source/Drain Diffusion and Body Doping Layouts for High-Performance and Low-Energy Triple-Gate SOI MOSFETs --
Gate Field Engineering and Source/Drain Diffusion Engineering for High-Performance Si Wire Gate-All-Around MOSFET and Low-Power Strategy in a Sub-30 nm-Channel Regime --
Impact of Local High-k Insulator on Drivability and Standby Power of Gate-All-Around SOI MOSFET --
POTENTIAL OF PARTIALLY DEPLETED SOI MOSFETs. Proposal for Cross-Current Tetrode (XCT) SOI MOSFETs --
Device Model of the XCT-SOI MOSFET and Scaling Scheme --
Low-Power Multivoltage Reference Circuit Using XCT-SOI MOSFET --
Low-Energy Operation Mechanisms for XCT-SOI CMOS Devices --
QUANTUM EFFECTS AND APPLICATIONS--1. Overview --
Si Resonant Tunneling MOS Transistor --
Tunneling Dielectric Thin-Film Transistor --
Proposal for a Tunnel-Barrier Junction (TBJ) MOSFET --
Performance Prediction of SOI Tunneling-Barrier-Junction MOSFET --
Physics-Based Model for TBJ-MOSFETs and High-Frequency Performance Prospects --
Low-Power High-Temperature-Operation-Tolerant (HTOT) SOI MOSFET --
QUANTUM EFFECTS AND APPLICATIONS--2. Overview of Tunnel Field-Effect Transistor --
Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor --
The Impact of a Fringing Field on the Device Performance of a P-Channel Tunnel Field-Effect Transistor with a High-k Gate Dielectric --
Impact of a Spacer-Drain Overlap on the Characteristics of a Silicon Tunnel Field-Effect Transistor Based on Vertical Tunneling --
Gate-on-Germanium Source Tunnel Field-Effect Transistor Enabling Sub-0.5-V Operation --
PROSPECTS OF LOW-ENERGY DEVICE TECHNOLOLGY AND APPLICATIONS. Performance Comparison of Modern Devices --
Emerging Device Technology and the Future of MOSFET --
How Devices Are and Should Be Applied to Circuits --
Prospects for Low-Energy Device Technology and Applications.
Other Titles: Promising MOS Devices for Low-Voltage and Low-Energy Applications
Responsibility: Yasuhisa Omura, Abhijit Mallik, and Naoto Matsuo.

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